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Metal electrode for light inlet surface of crystalline silicon heterojunction solar cell and preparation method of metal electrode

A metal electrode and solar cell technology, applied in the field of solar cells, can solve the problems of low series resistance and short-circuit current of solar cells, limit the conversion efficiency of solar cells, and unsatisfactory bonding strength of substrates, so as to improve photoelectric conversion efficiency and reduce silver consumption. The effect of reducing production cost

Inactive Publication Date: 2015-11-18
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The organic matter in the low-temperature silver paste structure will partially remain in the final electrode, which affects the conductivity and the bonding strength with the substrate is not ideal
The electrical conductivity of the grid wire prepared by this structure is only 1%~10% of that of pure silver material, resulting in too low series resistance and short-circuit current of the final solar cell, which limits the improvement of solar cell conversion efficiency and wastes a lot of energy. silver material

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Taking the double-sided heterocrystalline silicon solar cell with n-type single crystal silicon of 156mm*156mm as the substrate as an example, and combining the content of the present invention to describe specific implementation cases, the present invention will be further explained, but the present invention should not be limited by this scope of protection.

[0017] The composition of the designed metal electrodes is as follows: the width of the thin grid line is 10 microns, the thickness is 2 microns, the interval between adjacent thin grid lines is 500 microns, and the number is 156; the width of the main grid line is 0.5 mm, and the thickness is 2 microns. Micron, the number of strips is 6, arranged at equal intervals on the surface of the silicon wafer. Both sides of the substrate adopt a symmetrical metal electrode structure.

[0018] After the corresponding TCO film is deposited on both sides of the monocrystalline silicon substrate, the metal electrodes on th...

Embodiment 2

[0025] Taking the double-sided heterocrystalline silicon solar cell with n-type single crystal silicon of 156mm*156mm as the substrate as an example, and combining the content of the present invention to describe specific implementation cases, the present invention will be further explained, but the present invention should not be limited by this scope of protection.

[0026] The composition of the designed metal electrodes is as follows: the width of the thin grid lines is 20 microns, the thickness is 10 microns, the interval between adjacent thin grid lines is 1.5 mm, and the number of bars is 100; the width of the main grid lines is 1.2 mm, and the thickness is 10 microns. Micron, the number of strips is 3, arranged at equal intervals on the surface of the silicon wafer. Both sides of the substrate adopt a symmetrical metal electrode structure.

[0027] After the corresponding TCO films are deposited on both sides of the monocrystalline silicon substrate, the metal electro...

Embodiment 3

[0034] Taking the double-sided heterocrystalline silicon solar cell with n-type single crystal silicon of 156mm*156mm as the substrate as an example, and combining the content of the present invention to describe specific implementation cases, the present invention will be further explained, but the present invention should not be limited by this scope of protection.

[0035] The composition of the designed metal electrodes is as follows: the width of the thin grid lines is 2 microns, the thickness is 1 micron, the interval between adjacent thin grid lines is 100 microns, and the number of them is 780; there is no main grid line. Both sides of the substrate adopt a symmetrical metal electrode structure.

[0036] After the corresponding TCO films are deposited on both sides of the monocrystalline silicon substrate, the metal electrodes on the front and back sides are prepared according to the following process:

[0037] Step 1: Coating a layer of positive photoresist on both s...

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Abstract

The invention discloses a metal electrode for a light inlet surface of a crystalline silicon heterojunction solar cell and a preparation method of the metal electrode. A fine grid line is formed by silver or a transition layer / silver, and is matched with optimally designed main grid line or no main grid line; and preparation is carried out by a physical vapour deposition method or a chemical coating method and the like, so as to obtain the metal electrode for the crystalline silicon heterojunction solar cell. By the grid line structure and the preparation method disclosed by the invention, the total silver material consumed by the metal electrode in the crystalline silicon heterojunction solar cell is reduced to below 20% that consumed by an existing silk-screen printing-based low-temperature silver paste technology; the series resistance caused by the metal grid line is reduced to below 10% that of the existing silk-screen printing-based low-temperature silver paste technology; and the conversion efficiency of the crystalline silicon heterojunction solar cell can be improved by over 0.5%.

Description

technical field [0001] The invention relates to a metal electrode for a light-incoming surface of a crystalline silicon heterojunction solar cell and a preparation method thereof, belonging to the field of solar cells. It involves structural design and preparation technology of solar cells. Background technique [0002] The basic structure of a crystalline silicon heterojunction solar cell is a heterojunction structure composed of a doped amorphous silicon film (or microcrystalline silicon, nano-silicon film) and a doped crystalline silicon wafer. Layer very thin passivation layers to improve device performance. Then deposit a transparent conductive oxide film on the surface, and finally make a metal electrode on the transparent conductive oxide film. The most typical and widely accepted metal electrode currently used is the same main-sub-grid structure as the front electrode of conventional crystalline silicon solar cells and is prepared by screen printing, but the low-te...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022425H01L31/1804Y02E10/547Y02P70/50
Inventor 黄海宾周浪
Owner NANCHANG UNIV