Method and device for manufacturing barrier film layer

Abstract

The invention discloses a method and device for manufacturing a barrier film layer. The method includes the steps that a ceramic material doped with metal is provided as a target, wherein the characteristics of metallic elements and metallic compounds are the same as those of the barrier film layer; the target is arranged in a reaction cavity; a substrate to be plated with a film is arranged in the reaction cavity; reactant gas and sputtering gas are introduced into the reaction cavity; a direct-current power source is adopted for providing the working voltage for the target; and when the direct-current power source is turned on, the barrier film layer is deposited on the substrate in a reaction sputtering manner. By the adoption of the method, the direct-current power source can be adopted for manufacturing the non-metallic ion barrier film layer, the method can be applied to actual production, the film layer manufactured through the method is large in area, the temperature is low, the deposition speed of the film layer is adjustable, and the evenness of the film layer is controllable.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method and equipment for preparing a barrier film. Background technique [0002] As a new energy battery, solar cells have attracted more and more attention, and the output performance parameters of solar cells are affected by the preparation process to a certain extent. [0003] For example, after depositing a film layer on the substrate of a solar cell, a large amount of sodium, iron, chromium, oxygen plasma contained in the substrate diffuses into the film due to the excitation of temperature, humidity or electric field in the subsequent process, Thus, the stability of the long-term operation performance of the solar cell device is affected. Therefore, in the actual production process of thin film batteries, a non-metal ion barrier film layer is generally used between the substrate and the device for insulation, passivation and diffusion barrier. [0004] At present, t...

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Problems solved by technology

[0004] At present, the common preparation method of ion barrier film is mainly plasma-enhanced chemical vapor deposition. The film prepared by this method has good properties, and is often used as the surface passivation layer of some functional devices and the light-absorbing layer of crystalline silicon solar cells. However, this method has problems such as slow deposition rate and difficult control of film uniformity.

[0005] In addition, magnetron sputtering can also be used to prepare ion-blocking films, but limited by the sputtering power supply and equipment size, it is difficult to achieve large-area uniform preparation of non-metallic films.

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