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Phase-change type vanadium oxide material and preparing method thereof

A vanadium oxide and phase change technology, which is applied in metal material coating technology, ion implantation plating, coating, etc., can solve the problem that the regional phase change temperature adjustment of materials cannot be realized, and the phase change temperature adjustment process is complicated and cannot be realized. Continuous adjustment and other problems, to achieve the effect of large phase change temperature adjustment range, easy operation and simple steps

Active Publication Date: 2015-11-25
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a phase-change vanadium oxide material and a preparation method thereof, which are used to solve the complex phase-change temperature adjustment process of the vanadium oxide material in the prior art, and the temperature adjustment range Problems of small size, inability to realize continuous regulation and inability to realize regional phase change temperature regulation of materials

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  • Phase-change type vanadium oxide material and preparing method thereof
  • Phase-change type vanadium oxide material and preparing method thereof
  • Phase-change type vanadium oxide material and preparing method thereof

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Embodiment 1

[0036] The invention provides a method for preparing a phase-change vanadium oxide material, comprising the following steps:

[0037] A vanadium oxide substrate is provided, and gas ion implantation is performed on the vanadium oxide substrate to obtain a phase-change vanadium oxide material with a preset phase transition temperature.

[0038] Specifically, the vanadium oxide substrate may be in the form of a thin film, or in the form of a patterned nanostructure, a block, or the like. The material of the vanadium oxide substrate can be VO 2 , can also be other low-valent oxides of vanadium VO, V 2 o 3 or V 2 o 5 , which all have semiconductor-metal phase transition characteristics.

[0039] As an example, a vanadium dioxide film is used as the vanadium oxide substrate. like figure 1 As shown, first a vanadium dioxide film 2 is prepared on a substrate 1, and then gas ion implantation is performed on the vanadium dioxide film 2. The preparation method of the vanadium di...

Embodiment 2

[0053] This embodiment adopts basically the same technical scheme as that of Embodiment 1, the difference is that in Embodiment 1, the overall phase transition temperature of the vanadium oxide substrate is changed, while in this embodiment, only the phase transition temperature of a local region of the vanadium oxide substrate is changed. phase transition temperature.

[0054] like Figure 4 As shown, a vanadium dioxide film 2 is first prepared on a substrate 1, and then gas ion implantation is performed on the vanadium dioxide film 2, wherein, when performing gas ion implantation, a mask plate 3 is used, and the mask plate 3. Only a part of the vanadium dioxide thin film 2 is exposed, so that gas ions are only implanted into the exposed area, so as to change the phase transition temperature of the vanadium oxide substrate in a local area. This phase-change vanadium oxide material with local phase transition temperature changes has good application prospects in the preparati...

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Abstract

The invention provides a phase-change type vanadium oxide material and a preparing method thereof. The preparing method comprises the following steps of providing a vanadium oxide base material, injecting gas ions into the vanadium oxide base material to obtain the phase-change type vanadium oxide material with the preset phase-change temperature, selectively adjusting the forming situation of bubbles injected into vanadium oxide through further annealing and further adjusting stress strain and phase-change temperature. The preparing method for the phase-change type vanadium oxide material is simple in step, good in technological repeatability and high in flexibility; and the phase-change temperature of vanadium oxide can be continuously adjusted by changing the injecting amount of the gas ions. Meanwhile, the preparing method is good in compatibility and can be combined with other phase-change temperature methods to obtain a larger phase-change temperature adjusting range. Furthermore, the preparing method further can achieve regional phase-temperature adjustment and provides a new way for preparing vanadium oxide devices.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to a phase-change vanadium oxide material and a preparation method thereof. Background technique [0002] Metallic vanadium reacts with oxygen to form complex vanadium oxide systems with various forms of stoichiometry. Most of the vanadium oxides can undergo insulator-metal transition under thermal excitation, and have different phase transition temperatures. Among all vanadium oxides, vanadium dioxide (VO 2 ) has attracted extensive attention from researchers because of its remarkable and reversible metal-insulator (MIT) phase transition characteristics near 68 °C, and the phase transition temperature is closest to room temperature. [0003] During the phase transition, the crystal structure of vanadium dioxide changes between a monoclinic structure (at low temperatures) and a tetragonal rutile structure (at high temperatures). At the same time, many physical properties of vana...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/48C23C14/58
CPCC23C14/042C23C14/083C23C14/48C23C14/5806
Inventor 欧欣贾棋黄凯王曦
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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