N-doped SiC nanoneedle and application thereof

A technology of nano-needles and doping amount, applied in the field of N-doped SiC nano-needles, can solve the problem of undisclosed atomic doping flexible cathode materials, etc., and achieve the effect of stabilizing electron emission characteristics

Active Publication Date: 2015-11-25
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the cathode material prepared in this patent is SiC nanowires with catalyst particles at the end, and there is no disclosure of atom-doped SiC nanostructure flexible cathode materials

Method used

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  • N-doped SiC nanoneedle and application thereof
  • N-doped SiC nanoneedle and application thereof
  • N-doped SiC nanoneedle and application thereof

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Embodiment 1

[0033] The initial raw material is polysilazane, in N 2 Under the protection of the atmosphere, heat preservation at 260°C for 30 minutes for thermal crosslinking and curing. Put the solidified SiCN solid into a nylon resin ball mill tank, and ball mill it into powder. Weigh 300 mg of polysilazane powder and place it at the bottom of the graphite crucible container. Cut carbon fiber cloth 5×5cm (length×width), and spray a layer of 10nm thick Au film on its surface as a catalyst. Arrange the Au-sprayed carbon fiber on the top of the graphite crucible container, and place it in an atmosphere sintering furnace heated by graphite resistance. The atmosphere furnace is first evacuated to 10 -4 Pa, refill N 2 :Ar=5:95 mixed gas (purity is 99.99%), until the pressure is one atmosphere (~0.11Mpa), and then the pressure is constant. Then heat up rapidly from room temperature to 1750°C at a rate of 30°C / min for pyrolysis, then cool down to 1100°C at a rate of 16°C / min, and finally c...

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Abstract

The invention relates to N-doped SiC nanoneedle and application thereof. The doping amount of N atoms in the N-doped SiC nanoneedle is 2-10at%. The length of the nanoneedle is 1-100 micrometers. The diameter of the tip of the needle is 50-500 nm. The N-doped SiC nanoneedle serves as a flexible field emitting cathode material. The N-doped SiC nanoneedle flexible field emitting cathode material has the low opening electric field at different temperatures and has the stable electron emission characteristics at high temperatures.

Description

technical field [0001] The invention relates to a SiC field emission cathode material and its application, in particular to an N-doped SiC nanometer needle and its application. Background technique [0002] With the development of flexible wearable and portable functional electronic devices, it is required that the components that construct their working devices not only have good flexibility, but also provide sufficient superior working performance and stability. Therefore, using low-dimensional nano-semiconductor components to construct functionally flexible systems with both mechanical flexibility and superior performance is one of the active research hotspots at home and abroad. Field emission is one of the intrinsic properties of low-dimensional nanomaterials. Studies have shown that nanostructures have excellent field emission properties that traditional materials do not have, and have great potential application prospects in the field of display and other optoelectro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/32B82Y40/00C30B25/00C30B29/36C30B29/62H01J1/304
Inventor 陈善亮高凤梅王霖郑金桔杨为佑
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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