Improved structure of single crystal furnace for growing large-size sapphire

A sapphire, single crystal furnace technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of bubble formation, unstable growth rate, cracking, etc., to reduce the formation probability, uniform and stable thermal field, reduce effect of dependence

Inactive Publication Date: 2015-11-25
HARBIN AURORA OPTOELECTRONICS TECH
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Problems solved by technology

It avoids the instability of growth rate in the early stage of crystal growth and the formation of bubbles, cracks and other defects caused by excessive crystal growth rate in t

Method used

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  • Improved structure of single crystal furnace for growing large-size sapphire

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Embodiment Construction

[0017] The present invention will be described in detail below in conjunction with the accompanying drawings. figure 1 It is a schematic diagram of the improved sapphire single crystal structure of this embodiment. The basic structure of the overall structure of the single crystal furnace remains unchanged, and is still divided into the upper part (the upper molybdenum heat shield 1 and the molybdenum crucible cover 2), the side (the molybdenum cylinder heat shield 3 and ceramic insulation layer 4) and bottom insulation structure (lower molybdenum heat shield 5 and bottom ceramic insulation layer 6). The upper and bottom insulation structures are basically the same as those in the previous patents. The difference is that the side insulation structure is changed from the same upper and lower structure to the thickness of the insulation layer gradually decreases from top to bottom. As shown in the figure, the improved multi-layer molybdenum cylinder side insulation The height of...

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Abstract

The invention provides an improved structure of a single crystal furnace for growing large-size sapphire. The improved structure comprises an upper thermal insulation structure, side thermal insulation structures and a bottom thermal insulation structure, wherein the upper thermal insulation structure and the bottom thermal insulation structure are identical to those in patents of the earlier stage; the difference resides in that the thicknesses of the thermal insulation layers are gradually reduced from top to bottom instead of identical thicknesses of upper and lower structures of the side thermal insulation structures, the diameter of a birdcage-like heating body is gradually reduced from top to bottom, and the heating body is in a shape of an inverted cone. The thermal field is uniform and reasonable, the crystal growth rate is stable, defects that crystals generates clouds, are glued on pots and the like can be effectively reduced, the dependence on a process control worker is low, and the crystal growth yield is high.

Description

(1) Technical field [0001] The invention relates to an improved structure of a single crystal furnace for growing large-size sapphire, in particular to an improved structure of a single crystal furnace for growing large-size sapphire by the Kyropoulos method. (2) Background technology [0002] Sapphire single crystal has excellent mechanical, thermal, optical and other properties, and is widely used in many fields of science and technology, national defense and civil industry, and semiconductor industry. It is currently the preferred material for blue-light GaN epitaxial substrates in the LED market. With the continuous progress of sapphire single crystal growth and processing technology, the development of the industry is becoming more and more mature, and the comprehensive advantages of sapphire products in terms of cost and performance are becoming more and more prominent. Therefore, sapphire has a good role in consumer electronics and other consumer products. Application...

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Application Information

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IPC IPC(8): C30B17/00C30B29/20
Inventor 左洪波杨鑫宏张学军
Owner HARBIN AURORA OPTOELECTRONICS TECH
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