Self-alignment method for silicon carbide devices

Abstract

The present invention discloses a self-alignment method for silicon carbide devices including the steps as follows: preparing an exposed channel and a groove on a wafer; depositing one layer of first dielectric layer on the bottom and the side wall of the groove and the surface of the channel, wherein, a material of the first dielectric layer contains end point detection indicator elements of a dry etching; depositing one layer of second dielectric layer on the surface of the first dielectric layer so as to cover the bottom and the side wall of the groove and the surface of the channel; coating the surface of the second dielectric layer of the corresponding groove with a photoresistfor filling an interspace of the groove so that the exposed surface of the photoresist aligns at the surface of the second dielectric layer of the corresponding channel; removing the second dielectric layer and the first dielectric layer of the corresponding channel by dry etching so as to expose the surface of the channel; and forming one layer of upper surface metal electrode on the surface of the exposed channel. The self-alignment method can avoid that the second dielectric layer with a bigger thickness deposits on the surface of the first dielectric layer; and the self-alignment method is free from a restriction of special equipment of a chemical machinery lapping method or the dry etching.

Description

technical field [0001] The invention relates to the technical field of processing technology of silicon carbide devices. More specifically, it relates to a self-alignment method for silicon carbide devices. Background technique [0002] As one of the third-generation broadband compound semiconductor materials, silicon carbide has incomparable advantages over traditional silicon and gallium arsenide materials in terms of band gap, maximum field strength, doping concentration, and thermal conductivity, and is especially suitable for high-voltage, High-frequency, high-power, high-irradiation and photoelectric detection technology of certain wavelengths. Therefore, silicon carbide has received extensive attention from researchers in power microwave and optoelectronic devices. [0003] Compared with traditional silicon-based devices, based on the advantages of material properties, silicon carbide devices have the advantages of simple structure, small size and high performance. ...

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Problems solved by technology

[0018] (3) In the above step S5, the uniformity of dry etching cannot be guaranteed, which may easily lead to poor contact between the metal electrode 2 and the channel 1 on the under-etched region of the first dielectric layer 3, and the over-etching of the second dielectric layer 4 The metal electrode 2 on the upper surface of the etched area is in contact with the sidewall of the trench

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