Pattern formation method, electronic-device manufacturing method, and electronic device

Abstract

A pattern formation method that includes the following steps, in this order: a step in which an actinic-light-sensitive or radiation-sensitive film is formed by coating a substrate with an actinic-light-sensitive or radiation-sensitive resin composition containing a solvent, a compound that produces an acid upon exposure to actinic light or radiation, and a resin, the solubility of which in a developer that contains at least one organic solvent can be reduced by the action of an acid; a step in which the actinic-light-sensitive or radiation-sensitive film is exposed through an immersion liquid; a step in which the actinic-light-sensitive or radiation-sensitive film is heated; and a step in which the actinic-light-sensitive or radiation-sensitive film is developed in a developer containing an organic solvent. This pattern formation method also includes a step or steps, after the film-formation step but before the exposure step and / or after the exposure step but before the heating step, in which the actinic-light-sensitive or radiation-sensitive film is washed.

Description

technical field [0001] The present invention relates to a method suitable for semiconductor manufacturing steps such as integrated circuits (Integrated Circuits, IC), manufacturing of circuit substrates such as liquid crystals and thermal heads, and photolithography (lithography) steps of other photosensitive etching processes (photofabrication). The pattern forming method used, the manufacturing method of the electronic component, and the electronic component. Background technique [0002] In resists for KrF excimer laser (248nm) and photolithography for semiconductors, a patterning method using chemical amplification is used. [0003] Shorter wavelengths of exposure light sources and higher numerical aperture (high NA) of projection lenses are being promoted for miniaturization of semiconductor devices, and exposure machines using ArF excimer lasers with a wavelength of 193 nm as light sources are currently being developed. As a technique for further improving the resolut...

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Problems solved by technology

[0005] In the immersion method, it is known that the defect caused by the immersion liquid (immersion water) remaining on the resist surface by immersion exposure, that is, the acid in the exposed part of the resist diffuses to the remaining on the resist film. The liquid on the surface is immersed in water, and the reaction rate of the deprotected catalyst is reduced due to the acid in the exposed part, or the acid diffused into the liquid immersion water causes the deprotection reaction of the unexposed part, resulting in temperature unevenness in the heating step after exposure, so that Line width uniformity of resist pattern, pattern shape defect, deterioration of development defect (hereinafter also referred to as "water residual defect")

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