Preparation method of sapphire fingerprint recognition panel
A fingerprint recognition and sapphire technology, applied in stone processing equipment, character and pattern recognition, chemical instruments and methods, etc., can solve the problems of poor quality of fingerprint recognition panels and low yield, and achieve complete wafer structure, high yield, high productivity
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Embodiment 1
[0034] The preparation method of the sapphire fingerprint recognition panel of the present embodiment specifically includes the following steps:
[0035] Step 1, crystal growth; put pure Al in the crucible of crystal growth furnace 2 o 3 Raw material, above the crucible is provided with a rotatable and lifting lifting rod, and the lower end of the lifting rod is clamped with a seed crystal with a C crystal orientation; the crystal growth furnace is vacuumed and a protective gas is introduced, and the temperature is raised to 2200 ° C, so that the Al 2 o 3 Melt, control the liquid surface temperature of the melt to 2055°C, place the seed crystal in Al 2 o 3 The upper surface of the melt is in contact with the melt for 1 hour; after the seed crystal is fully wetted with the melt, the seed crystal is pulled and rotated to achieve necking-shoulder expansion-equal diameter growth; in the necking stage, control The liquid surface temperature of the melt is 2050°C, the seed cryst...
Embodiment 2
[0047] The preparation method of the sapphire fingerprint recognition panel of the present embodiment specifically includes the following steps:
[0048] Step 1, crystal growth; put pure Al in the crucible of crystal growth furnace 2 o 3 Raw material, above the crucible is provided with a rotatable and lifting lifting rod, and the lower end of the lifting rod is clamped with a seed crystal with a C crystal orientation; the crystal growth furnace is vacuumed and a protective gas is introduced, and the temperature is raised to 2100 ° C, so that the Al 2 o 3 Melt, control the liquid surface temperature of the melt to 2055°C, place the seed crystal in Al 2 o 3 The upper surface of the melt makes it contact with the melt for 0.5h; after the seed crystal and the melt are fully wetted, the seed crystal is pulled and rotated to achieve necking-shoulder expansion-equal diameter growth; in the necking stage, Control the liquid surface temperature of the melt to 2050°C, pull the seed...
Embodiment 3
[0060] The preparation method of the sapphire fingerprint recognition panel of the present embodiment specifically includes the following steps:
[0061] Step 1, crystal growth; put pure Al in the crucible of crystal growth furnace 2 o 3 Raw material, above the crucible is provided with a rotatable and lifting lifting rod, and the lower end of the lifting rod is clamped with a seed crystal with a C crystal orientation; the crystal growth furnace is vacuumed and a protective gas is introduced, and the temperature is raised to 2150 ° C, so that the Al 2 o 3 Melt, control the liquid surface temperature of the melt to 2055°C, place the seed crystal in Al 2 o 3 The upper surface of the melt is in contact with the melt for 1 hour; after the seed crystal is fully wetted with the melt, the seed crystal is pulled and rotated to achieve necking-shoulder expansion-equal diameter growth; in the necking stage, control The liquid surface temperature of the melt is 2050°C, the seed cryst...
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