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Special-shaped semiconductor wafer, preparation method and wafer support pad

A semiconductor and support pad technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as difficult chip control, difficult leveling and high roughness requirements, chip breakage, etc., to avoid chip damage , good wafer flatness and roughness, and the effect of improving yield

Active Publication Date: 2015-12-16
BEIJING TONGMEI XTAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among these processing steps, odd-shaped semiconductor wafers are much more difficult to handle than round semiconductor wafers, for example, if a square-shaped semiconductor wafer is placed on a wafer support pad in a conventional wafer grinding and polishing apparatus with a circular cavity Inside, the right angle of the square wafer needs to adopt a larger transition arc, resulting in a waste of the effective area of ​​the wafer; at the same time, it is not easy to control the wafer in the inner cavity of the circular support pad during operation. On the contrary, the wafer Easy to "escape" from the inner cavity of the circular support pad, resulting in chip breakage
If a support pad with a square inner cavity is directly used, the corners of the wafer will be stressed during operation, and it is also easy to cause the wafer to break
[0004] Therefore, the square silicon wafers currently used for the preparation of solar cells are cut from crystal rods, without chamfering, surface grinding, chemical mechanical polishing, etc. requirements
[0005] In short, so far, there has not been a mature method that can produce flat non-circular, i.e. irregular-shaped semiconductor wafers on an industrial scale.

Method used

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  • Special-shaped semiconductor wafer, preparation method and wafer support pad
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  • Special-shaped semiconductor wafer, preparation method and wafer support pad

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0103] Cut out 50 pieces (divided into groups 1-4 according to 15, 15, 10, and 10 pieces) from a GaAs circular crystal rod with a diameter of 5.1 cm at a time with a multi-wire cutting machine. The circular wafers with the same thickness are all 450 microns ; Use a chamfering machine to chamfer the edges of each circular wafer to make the edge section into an arc. Then, the wafer was cleaved into 3.5 x 3.5 cm square wafers; figure 2 The quadrilateral wafer edger shown edges a square wafer; the wafer is then placed on a 280 micron thick, as Figure 4 The shown support pad (the model is Carrier-9B-50, purchased from Jiangsu Jiangyin Jingke Electronic Abrasive Material Factory, processed by the inventor himself, formed Figure 4 As shown in the inner cavity, the straight side extension lines of the inner cavity intersect to form a square of 3.5 × 3.5 cm (diagonal line is about 4.95 cm), and each corner formed by the straight side extension lines intersects also has convex parts...

Embodiment 2

[0115] Cut out 50 pieces (divided into groups 1-4 according to 15, 15, 10, and 10 pieces) of circular wafers with the same thickness from a 10.5 cm diameter InP circular crystal rod with a multi-wire cutting machine, and the thickness is 650 microns. ; Use a chamfering machine to chamfer the edges of each circular wafer to make the edge section into an arc. Then, the wafer was cleaved into 7.0 x 7.0 cm square wafers (9.9 cm diagonal); figure 2 The quadrilateral wafer edger shown edges a square wafer to obtain the proper edge shape; the chamfered wafer is then placed on a 360 micron thickness, eg Figure 4 The shown support pad (the model is Carrier-9B-50, purchased from Jiangsu Jiangyin Jingke Electronic Abrasive Material Factory, processed by the inventor himself, formed Figure 4 As shown in the inner cavity, the straight side extension lines of the inner cavity intersect to form a square of 7.0×7.0 cm, and each corner formed by the intersection of the straight side extens...

Embodiment 3

[0134] Cut out 50 pieces (divided into groups 1-4 according to 15, 15, 10, and 10 pieces) from a Si circular crystal rod with a diameter of 12 cm at a time with a multi-wire cutting machine. Circular wafers with the same thickness are all 480 microns ; Use a chamfering machine to chamfer the edges of each circular wafer to make the edge section into an arc. Then, the wafer was cleaved into 8.2 x 8.2 cm square wafers (diagonal about 11.6 cm); figure 2 The quadrilateral wafer edger shown edges a square wafer to obtain the proper edge shape; the chamfered wafer is then placed on a 290 micron thickness, eg Figure 4 The shown support pad (purchased from the Lexan type support pad of U.S. PRHORRMAN company, through the inventor's own processing, forms Figure 4 As shown in the inner cavity, the straight side extension lines of the inner cavity intersect to form a square of 8.2 × 8.2 cm, and each corner formed by the straight side extension lines intersects also has a convex part,...

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PUM

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Abstract

The invention provides a special-shaped semiconductor wafer, a preparation method and a wafer support pad. The method comprises the steps of (1) providing a special-shaped wafer original film; (2) conducting edging processing of the wafer original film; (3) conducting surface grinding processing of the wafer after edging; and (4) conducting rough polishing and then fine polishing of the wafer in a special-shaped support pad. In the step (3), the wafer is put into an inner cavity of a support pad, the inner cavity of the support pad has a plurality of straight sides, the extending lines of the straight sides intersect and form a special shape, the inner cavity is further provided with convex portions which are at corner portion formed by the intersection of the extending lines of the straight sides, the convex portions are connected with the corresponding adjacent straight sides through transition circular arcs, and the shape of the wafer matches the shape of the inner cavity. According to the invention, the risks of wafer breakage during the processing can be reduced or avoided, and the yield of the wafer can be improved.

Description

technical field [0001] The invention relates to a semiconductor wafer, its preparation method and a wafer support pad, more specifically, to a special-shaped semiconductor wafer, its preparation method and a wafer support pad. Background technique [0002] Semiconductor chips are attracting more and more attention due to their applications in various fields such as electronics, communications and energy. Among them, the use of semiconductor wafers as substrate materials for solar cells is an important application direction. At present, the substrate materials of solar cells are mostly circular substrates. After the epitaxy of the substrate and the subsequent cell process are completed, they are cut into square cells for module processing, which results in the cell material near the edge of the circular semiconductor wafer. waste. The development of a square substrate can save the cost of semiconductor wafer epitaxy and battery production, and facilitate the processing of s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/683
CPCH01L21/02H01L21/683H01L21/02013
Inventor 王元立刘文森刘继斌古燕刘英伟
Owner BEIJING TONGMEI XTAL TECH CO LTD