Method for forming light-dope drain region of MOS transistor

Abstract

The invention provides a method for forming a light-dope drain region of an MOS transistor, and the method comprises the steps: depositing a silicon nitride layer or a silicon dioxide layer on the surface of the MOS transistor forming a polycrystalline silicon grid; coating the silicon nitride layer or the silicon dioxide layer with photoresist, and forming a photoresist figure after exposure and development; carrying out the ion implantation of source and drain regions of the MOS transistor under the condition that the photoresist figure is taken as a mask, and forming a source and drain region; corroding the silicon nitride layer or the silicon dioxide layer, taking the photoresist figure as the mask for the ion implantation of the light-dope drain region, and forming a light-dope drain region. The method firstly grows the silicon nitride layer or the silicon dioxide layer to form a side wall through the optimization of a technological flow, secondly carrying out the photoetching and ion implantation of source and drain regions, thirdly forms the source and drain electrode, fourthly removing the silicon nitride layer or the silicon dioxide layer, and finally carries out the manufacturing of the light-dope drain electrode, thereby saving a photoetching layer, improving the work efficiency, and saving the cost.

Description

technical field [0001] The invention relates to the technical field of semiconductor chip manufacturing technology, in particular to a method for forming a lightly doped drain region of a MOS transistor. Background technique [0002] The fabrication of semiconductor integrated circuit chips utilizes batch processing technology to form a large number of complex devices of various types on the same silicon substrate and interconnect them to have complete electronic functions. With the rapid development of ultra-large-scale integrated circuits, the integration of chips is getting higher and higher, the size of components is getting smaller and smaller, and the various effects caused by the high density and small size of devices have an increasingly prominent impact on the fabrication results of semiconductor processes. . [0003] Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET, usually referred to as MOS transistor), when working in the saturation region, part of its...

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Problems solved by technology

[0005] In the manufacture of MOS transistors, the formation of the lightly doped drain (LDD, Light-Doped Drain) is usually completed by photolithography and implantation before the sidewall, and the subsequent fabrication of the source and drain requires another photo engraving and implantation, but the manufacturing method of the lightly doped drain of the MOS transistor in the prior art has cumbersome process steps

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