A low-temperature oxygen plasma ultra-clean water cleaning system for silicon wafers
A technology of oxygen plasma and plasma source, which is applied in the field of plasma ultra-clean water cleaning silicon wafer system, can solve problems such as environmental pollution, increased operating costs, waste liquid treatment, etc., to reduce process steps, save floor space, Cleaning process and the effect of step simplification
Inactive Publication Date: 2017-08-01
DALIAN MARITIME UNIVERSITY
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Problems solved by technology
Due to the large use of NH in the RCA cleaning method 4 OH, HCl and H 2 o 2 Such chemical reagents and high-purity chemical reagents will increase operating costs, and will also cause environmental pollution and waste liquid treatment problems
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[0020] (1) The effect of low temperature oxygen plasma formation time on the concentration of low temperature oxygen plasma ultra-clean water
[0021] The low-temperature oxygen plasma ultra-clean water formation experiment was carried out under the conditions of a silicon wafer cleaning tank with a volume of 200L, a water flow rate of 52.9L / min, a water temperature of 14.8°C, an oxygen volume flow rate of 7L / min, and an input power of 800W. The results are as follows figure 2 As shown, when the time to form low-temperature oxygen plasma ultra-clean water is 15 minutes, the mass concentration of low-temperature oxygen plasma ultra-clean water reaches 31.5 mg / L; when the reaction time is 30 min, the mass concentration of low-temperature oxygen plasma ultra-clean water reaches 34.2 mg / L, which meets the requirements of the silicon wafer cleaning process on the concentration of low-temperature oxygen plasma.
[0022] (2) The effect of plasma source discharge power on the concen...
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The invention discloses a low-temperature oxygen plasma ultra-clean water silicon chip cleaning system and method. The system is characterized by mainly comprising a plasma source, a high-frequency high-voltage power source, a gas-liquid dissolver, a gas-liquid mixed, a gas-liquid separator, a residual low-temperature oxygen plasma gas eliminator, a low-temperature oxygen plasma aqueous solution concentration detector, a silicon chip washing tank, a silicon chip cleaning support, valve bodies, a filer, a centrifugal pump, non-return valves, flowmeters and the like. The cleaning method is as follows: low-temperature oxygen plasma ultra-clean water with a preparation concentration of 20mg / L to 50mg / L is injected to the silicon chip washing tank, when the water temperature is 5 to 40 DEG C, the silicon chip cleaning time is 2s to 1min, organic pollutants, metal contaminated objects, particles and natural oxide films on the surfaces of silicon chips are removed, and the removal rate is higher than that of such conventional methods as O3 / HF, SPM(H2SO4 / H2O2) and HPM(HCl / H2O2) methods and the like.
Description
technical field [0001] The invention belongs to the field of semiconductor production and application, and relates to a silicon wafer cleaning system with low-temperature oxygen plasma ultra-clean water. Background technique [0002] Silicon wafer is the most widely used substrate material in semiconductor devices and integrated circuits. With the continuous development of VLSI, the line width of integrated circuits is continuously reduced, and the requirements for the polished surface quality of silicon wafers are becoming more and more stringent. This is mainly because particles on the polished surface, metal contamination, organic contamination, natural oxide film, micro-roughness, etc. will seriously affect the quality and yield of the device. Therefore, the cleaning of the silicon wafer surface has become a crucial link in the production process of semiconductor materials and devices. Due to the heavy use of NH by the RCA cleaning method 4 OH, HCl and H 2 o 2 Such c...
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IPC IPC(8): H01L21/67
CPCH01L21/67051
Inventor 白敏菂冷白羽
Owner DALIAN MARITIME UNIVERSITY