Optical pH sensor
An optical sensor, ph value technology, applied in scientific instruments, nanotechnology for sensing, instruments, etc., can solve problems such as inability to perform reliable measurements, and achieve the effect of accurate measurement of potential
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example 1
[0032] exist figure 1 A flattened space 101 is formed in a section of the tube 100 . The opposing walls thus formed are provided with recesses for the transparent window 102 and the sensor. The carrier layer of sensor 103 consists, for example, of p-doped silicon (111). Alternatively n-doped silicon (111) is used. A photoluminescent layer 104 is applied as a nanowire structure on the carrier layer 103 by means of plasma-assisted molecular beam epitaxy. The nanowire structure is made of a mixture of gallium nitride and indium gallium nitride. The nanowires have a diameter of up to 200 nm, preferably 30 nm to 50 nm, and a length of 60 nm to 700 nm, preferably 100 nm to 400 nm.
[0033] The sensor produced in this way is inserted into a recess in the flattened space 101 of the tube 100 . A UV / VIS transparent window 102 is introduced oppositely in the recess. The nanowire side 104 of the sensor is directed towards the window 102 and is in contact with the medium inside the t...
example 2
[0039] exist figure 2 in the use of sensors in microscopes. Here, a transparent carrier 103 made of sapphire is used as object carrier and arranged on a microscope stage 117 . The carrier 103 is provided with a conductive intermediate layer 115 . Preferably, doped aluminum gallium nitride or gallium nitride or indium tin oxide (ITO) is applied here as thin as possible (0.2 to 100 μm) as a grid or as a continuous layer by means of PVD. Next, the intermediate layer is provided with nanostructures 104 made of gallium nitride. This is performed by means of plasma-enhanced molecular beam epitaxy. The nanowires have a diameter of up to 300 nm, preferably 30 nm to 50 nm, and a length of 60 nm to 900 nm, preferably 100 nm to 500 nm. In addition, InGaN quantum dots are grown in a GaN matrix. It also shows pH-dependent photoluminescence, the intensity and sensitivity of which are controlled by the electric potential.
[0040] Alternatively GaN nanowires with embedded InGaN region...
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