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Method for reducing fissure rate of double-side diffused silicon wafers and shortening time required by diffusion technology

A diffusion process and double-sided diffusion technology, applied in the field of solar cells, can solve the problems of long time for entering and exiting the boat, reduced diffusion capacity, and increased production cost, and achieve the goals of reducing thermal stress, low fragmentation rate, and improving diffusion capacity Effect

Inactive Publication Date: 2015-12-30
JIANGXI UNIEX NEW ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If only the speed of entering and exiting the boat is reduced, the time for diffusion entering and exiting the boat will be longer, the diffusion capacity will be reduced, and the production cost will increase

Method used

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  • Method for reducing fissure rate of double-side diffused silicon wafers and shortening time required by diffusion technology

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Embodiment 1

[0023] A method for reducing the double-sided diffusion fragmentation rate and shortening the diffusion process time, the specific steps are as follows:

[0024] (1) Fill the quartz boat with the cleaned and textured silicon wafers, place the quartz boat filled with silicon wafers on the silicon carbide paddle, and open the furnace door;

[0025] (2) The silicon carbide paddle runs at a speed of 700mm / min to the interface between the quartz boat and the furnace nozzle, and then runs to the front limit at a speed of 300mm / min;

[0026] (3) The silicon carbide paddle runs to the lower limit at a speed of 500mm / min;

[0027] (4) Run the empty propeller to the rear limit at the maximum speed required by the equipment of 1000mm / min, and close the furnace door;

[0028] (5) Open the furnace door, and run the empty propeller to the rear limit at the maximum speed 1000mm / min required by the equipment.

[0029] (6) The silicon carbide paddle runs to the upper limit at a speed of 500m...

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Abstract

The invention discloses a method for reducing the fissure rate of double-side diffused silicon wafers and shortening the time required by a diffusion technology. According to the method, phosphorus diffusion is conducted on the cleaned and textured silicon wafers. The method is characterized in that operation is performed at different speeds during boat feeding and boat discharging, vacant-propeller operation is performed at the highest speed required by a diffusion device, the diffusion operation time is shortened, and diffusion capacity is improved. The silicon wafers operate at lower speed when being fed into or discharged out of a furnace tube, heat stress is reduced, and the fissure rate of the diffused silicon wafers is reduced.

Description

technical field [0001] The invention relates to a method for reducing the double-sided diffusion fragmentation rate and shortening the diffusion process time, belonging to the field of solar cells. Background technique [0002] At present, the production process of solar cells mainly includes cleaning texture, diffusion, etching, PECVD, screen printing and sintering. In the main manufacturing process of solar cells, diffusion forms PN junctions, which are the core of solar cells and play a vital role in photovoltaic conversion efficiency. The temperature of the diffusion furnace tube is about 820°C, and the ambient temperature of the diffusion process is about 25°C. When the diffusion silicon wafer enters and exits the furnace tube, the high temperature difference causes a large thermal stress on the silicon wafer. At this time, the silicon carbide paddle runs at a slower speed. It is easy to crack the silicon wafer, thereby reducing the yield rate of the cell. During sing...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02P70/50
Inventor 曹江伟杨晓琴陈园王晗
Owner JIANGXI UNIEX NEW ENERGY CO LTD
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