Semi-insulating double-side-polished microwave wafer
A double-sided polishing, semi-insulating technology, used in semiconductor devices, electrical components, circuits, etc., can solve problems such as affecting product performance, surface abrasion, and inconsistent electrical performance of microwave chips
Inactive Publication Date: 2016-01-06
江苏中科晶元信息材料有限公司
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Problems solved by technology
[0002] Microwave wafers made of traditional monocrystalline silicon are severely worn on the surface after grinding, with a depth of about 10 μm. Such monocrystalline silicon cannot be directly used to make devices; currently on the market, they are all polished on one side. Surface polished microwave sheet electrical properties are inconsistent, affecting product performance
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[0012] The present invention will be further described now in conjunction with accompanying drawing. These drawings are simplified schematic diagrams only to illustrate the basic structure of the present invention in a schematic way, so they only show the components relevant to the present invention.
[0013] Such as figure 1 As shown, a semi-insulating double-sided polished microwave wafer includes a wafer body 1, an upper polishing layer 2 is provided on the front of the wafer body 1, a lower polishing layer 3 is provided on the back of the wafer body 1, and the material of the wafer body 1 is arsenic gallium.
[0014] The thickness of the upper polishing layer 2 and the lower polishing layer 3 is less than 1.2 μm. The thickness of the polished microwave sheet is 450-550μm.
[0015] Gallium arsenide has some better electronic properties than single crystal silicon, so that gallium arsenide can be used in applications higher than 250GHz. GaAs will produce less sound if th...
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Abstract
The invention relates to a semi-insulating double-side-polished microwave wafer. The semi-insulating double-side-polished microwave wafer comprises a wafer body; an upper polishing layer is arranged on the front surface of the wafer body while a lower polishing layer is arranged on the back surface of the wafer body; and the wafer body is made from gallium arsenide. The gallium arsenide has a certain electronic property better than that of monocrystalline silicon, so that the gallium arsenide can be used in occasions greater than 250 Ghz; if equivalent gallium arsenide and monocrystalline silicon are both operated at high frequency at the same time, the gallium arsenide produces lower sound; and in addition, the gallium arsenide is higher in collapse pressure, so that the gallium arsenide is more suitable for being operated in high-power occasions than the equivalent monocrystalline silicon elements.
Description
technical field [0001] The invention relates to a semi-insulating double-sided polished microwave wafer. Background technique [0002] Microwave wafers made of traditional monocrystalline silicon are severely worn on the surface after grinding, with a depth of about 10 μm. Such monocrystalline silicon cannot be directly used to make devices; currently on the market, they are all polished on one side. Surface polished microwave sheet electrical properties are inconsistent, affecting product performance. Contents of the invention [0003] The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art and provide a semi-insulating double-sided polished microwave wafer. [0004] The technical solution adopted by the present invention to solve the technical problem is: a semi-insulating double-sided polished microwave wafer, comprising a wafer body, an upper polishing layer is provided on the front side of the wafer body, and a low...
Claims
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Login to View More IPC IPC(8): H01L29/20
CPCH01L29/20
Inventor 戚林
Owner 江苏中科晶元信息材料有限公司