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Method for preparing high-conductivity indium gallium zinc oxide (IGZO) sputtering target material and product of high-conductivity IGZO sputtering target material

A sputtering target and high conductivity technology, which is applied in the field of preparation of high conductivity IGZO sputtering targets, can solve the problems of large difference in measured values, poor uniformity of target electrical properties, and reduced target conductivity.

Inactive Publication Date: 2016-01-13
福建省诺希科技园发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The sputtering target requires the target to have high physical and chemical properties, high purity, high density, and high conductivity. Although the above two production processes can meet the requirements in terms of the purity and density of the target, due to process limitations, The prepared target has poor gloss, and the color of the target is light. At the same time, with the In 2 o 3 The decrease of the content in the overall proportion of the target's electrical conductivity is particularly obvious, even appearing above 1Ω·cm, and the electrical uniformity of the target is also poor, and the measured values ​​​​of different parts vary greatly, and the low carrier concentration , low Hall mobility will have a great impact on the performance of the coating, which will lead to the production of products that cannot meet the requirements of use and unreasonable consumption of energy

Method used

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  • Method for preparing high-conductivity indium gallium zinc oxide (IGZO) sputtering target material and product of high-conductivity IGZO sputtering target material
  • Method for preparing high-conductivity indium gallium zinc oxide (IGZO) sputtering target material and product of high-conductivity IGZO sputtering target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A method for preparing a high-conductivity IGZO sputtering target, which uses indium oxide, gallium oxide, and zinc oxide powders with a molar ratio of 1:1:2 as raw materials, and the preparation process includes the following steps:

[0026] 1) Made from raw embryos, specifically including:

[0027] 1.1) Mixing: mix the three raw materials evenly;

[0028] 1.2) Grouting;

[0029] 1.3) Densification treatment: After drying the grouted blanks, cold isostatic pressing is performed to obtain green embryos. The maximum pressure of cold isostatic pressing is 270MPa, and the holding time is 2 minutes;

[0030] 2) Oxygen sintering: place the prepared green body in an environment with an oxygen concentration of more than 95% for heating and sintering, raise the temperature to 1360°C at a rate of 40-100°C / h, hold for 2 hours and then anneal.

[0031] 3) Vacuum heat treatment: put the high-density target material obtained by oxygen-passing sintering under vacuum conditions, rai...

example 2-6

[0033] Embodiment 2-6 adopts the manufacturing method identical with embodiment 1, and difference is to use different raw material molar ratio, reaction pressure, time, temperature value in each step listed in table 1 to replace the adopted one of embodiment 1 respectively corresponding value.

[0034] Table 1

[0035]

[0036] The resistivity and relative density of the finished products of each embodiment are shown in Table 2.

[0037] Table 2

[0038]

[0039] It can be seen from Table 2 that the resistivity of the IGZO sputtering target prepared by the scheme of Examples 1-6 is much higher than that of Comparative Example 1 without vacuum treatment, and the relative density is not significantly affected by the vacuum treatment. changes are even better. The present invention adds vacuum heat treatment on the basis of oxygen-passing sintering, and successfully obtains an IGZO target material with deepened and uniform color and greatly improved electrical conductivit...

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Abstract

The invention discloses a method for preparing a high-conductivity indium gallium zinc oxide (IGZO) sputtering target material. The high-conductivity IGZO sputtering target material is prepared from indium oxide powder, gallium oxide powder and zinc oxide powder, wherein the molar ratio of the indium oxide powder to gallium oxide powder and zinc oxide powder is 1:(0-1):(0.5-2). The method for preparing the high-conductivity IGZO sputtering target material comprises the steps of preparation of a blank, oxygen introduction for sintering and vacuum heat treatment. According to the method for preparing the high-conductivity IGZO sputtering target material, the vacuum treatment step is added after the traditional step of oxygen introduction for sintering for the IGZO sputtering target material, component defects of the target material are overcome by conducting reduction of the target material, so that semi-conductivity is promoted, and accordingly the conductivity is improved; meanwhile, it is guaranteed that the density of a finished product meets the requirement, and the performance and the yield of the IGZO sputtering target material are improved.

Description

technical field [0001] The invention relates to a coating target material production process, in particular to a preparation method of a high-conductivity IGZO sputtering target material and a product thereof. Background technique [0002] IGZO (indium gallium zinc oxide) is the abbreviation of indium gallium zinc oxide, and the IGZO sputtering target is In 2 o 3 with Ga 2 o 3 A series of targets co-doped with ZnO is one of the multiple-doped ZnO systems. IGZO sputtering target material contains low indium content, has high visible light transmittance, high infrared light reflectivity, high electrical conductivity, and it has good combination with glass materials, and also has wear resistance and good Chemical stability, it can be used as a substitute for ITO (indium tin oxide) in many fields. For example, in flat liquid crystal display devices, IGZO thin film transistors using indium gallium zinc oxide as the semiconductor channel layer material have the advantages of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
Inventor 林杰
Owner 福建省诺希科技园发展有限公司
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