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A kind of protection method of metal electrode when soi MEMS sacrificial layer corrodes

A metal electrode and sacrificial layer technology, applied in the direction of metal material coating process, coating, and process for producing decorative surface effects, etc., can solve the problem of short extension time, achieve good integrity, increase flexibility, and extend The effect of corrosion time

Inactive Publication Date: 2017-05-24
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the corrosion resistance of metal electrodes is generally extended by improving the corrosion resistance of electrodes and using photoresist protection, but these methods extend the time for a short time

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  • A kind of protection method of metal electrode when soi MEMS sacrificial layer corrodes
  • A kind of protection method of metal electrode when soi MEMS sacrificial layer corrodes
  • A kind of protection method of metal electrode when soi MEMS sacrificial layer corrodes

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Embodiment Construction

[0025] In order to clearly understand the technical solution of the present invention, its detailed structure will be presented in the following description. Obviously, the implementation of the embodiments of the invention is not limited to specific details familiar to those skilled in the art. The preferred embodiments of the present invention are described in detail below, and there may be other implementations besides those described in detail.

[0026] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0027] refer to figure 1 , the material used in this embodiment is an SOI silicon wafer, and the SOI includes a structural layer 1, a substrate layer 3, and an insulating layer 2 between the structural layer 1 and the substrate layer 3, and the thickness of the structural layer 1 is 80 μm. N-type silicon, resistivity 0.01~0.1Ω / cm, crystal orientation; insulating layer 2 thickness 5 μm; substrat...

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Abstract

A method for protecting a metal electrode during SOI MEMS sacrificial layer etching comprises the steps of conducting photoetching on the surface of an SOI silicon wafer structural layer, and manufacturing the metal electrode with the stripping technology; sputtering metallic aluminum on the surface of the SOI silicon wafer structural layer; conducting photoetching on the surface of the SOI silicon wafer structural layer to define an MEMS structural pattern; etching metallic aluminum exposed from the surface of the SOI silicon wafer structural layer; conducting DRIE anisotropic etching deep into an insulating layer by means of the metallic aluminum and a photoresist mask; etching the insulating layer for structure release; removing photoresist on the SOI silicon wafer structural layer through acetone soaking; etching aluminum on the surface of the SOI silicon wafer structural layer; conducting cracking, packaging and testing. According to the method, sacrificial layer etching is achieved by means of a glycerinum, HF and NH4F mixed solution, the metal electrode is protected through aluminum, sacrificial layer etching time can be prolonged remarkably, technology flexibility is improved, and the completeness of the metal electrode is higher.

Description

technical field [0001] The invention belongs to the technical field of micro-machining of micro-electro-mechanical systems, and in particular relates to a method for protecting metal electrodes when an SOI MEMS sacrificial layer is corroded. Background technique [0002] In recent years, SOI technology has made great progress, and its application in the MEMS field has the following advantages: the monocrystalline silicon structure layer has excellent mechanical properties; the SiO2 buried oxide layer as a sacrificial layer and insulating layer has excellent corrosion stop capability, In MEMS processing, it is easy to obtain a complete, defect-free, uniform thickness and precisely controlled structural layer; the thickness of the structural layer can be increased; the all-silicon structure is compatible with the CMOS process and can be integrated with denser circuits. At present, SOI MEMS mainly adopts two kinds of processes: front-side release process and back-side release p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
Inventor 张照云唐彬苏伟陈颖慧彭勃高扬熊壮
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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