PFA photoresist regeneration stripping solution and preparation method and application thereof

Abstract

The invention discloses a PFA photoresist regeneration stripping solution and a preparation method and application thereof. The PFA photoresist regeneration stripping solution comprises the following components by weight percentage: 7-20% of ester hydroxide, 5% of oxygen-containing amine ‑12%, water-soluble organic solvent 60‑75%, nonionic surfactant 0.5‑2%, corrosion inhibitor 0.1‑1.5%, and the balance is deionized water. The PFA photoresist regeneration stripping solution of the present invention can not only control the change of alkalinity, but also can greatly prolong the corrosion time of copper; while maintaining the due stripping efficiency and quality, it does not need to retain Cu / Al for the substrate. and PV layer cause corrosion.

Description

technical field [0001] The invention relates to the technical field of electronic chemicals, in particular to a PFA photoresist regeneration stripping solution and a preparation method and application thereof. Background technique [0002] In China, the high-generation liquid crystal display panel PFA process technology is also the first in China. The technical performance of the conventional stripping liquid products of domestic enterprises is unstable, and its technical indicators are difficult to meet the production line requirements. There are several reasons: [0003] 1. PFA material is a new type of organic material that is resistant to high temperature, low temperature, acid and alkali. It is difficult for general weak alkaline liquids to destroy or dissolve the PFA film. [0004] 2. The existing high alkalinity technology products will cause corrosion to the Cu circuit and PV layer on the substrate of the process; [0005] 3. The working temperature is high, the wat...

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Problems solved by technology

[0004] 2. Existing high-alkalinity technology products will cause corrosion to the Cu line and PV layer on the substrate of the process;

[0005] 3. The working temperature is high, the water evaporates continuously, and the alkalinity changes greatly, which leads to the shortened service life of the stripping liquid and the fluctuation and instability of the use effect;

[0006] 4. The conventional stripping liquid contains a sulfur-containing organic solvent, and the waste liquid of the stripping liquid after use is difficult to recycle or recycle.

[0007] The cost of new use is too high;

[0008] 5. The content of metal impurities and particle number is high, and the integrity of the PV layer and Cu circuit on the substrate cannot be guaranteed during use;

[0009] 6. The dissolution time of the product is too long, so that the dissolution is not timely, and equipment blockage occurs during use, which is not conducive to continuous production

[0010] The patent (CN107168021B) discloses that the stripping solution for photoresist is prepared by mixing ester-based quaternary ammonium hydroxide, water-soluble organic solvent, non-ionic surfactant, and deionization in a certain proportion, although the alkalinity change of the stripping solution environment can be controlled , so that the stripping ability of the stripping solution remains unchanged during the long-term production process. While maintaining the proper stripping efficiency and quality, it will not cause corrosion to the Cu / Al and PV layers that need to be retained on the substrate, but the copper will be corroded. time is still short

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