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Method for preparing graphene through plasma-enhanced chemical vapor deposition

A plasma and enhanced chemical technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, to achieve the effect of low reaction temperature, convenient operation and wide source

Inactive Publication Date: 2016-01-27
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] This method uses amorphous carbon as a carbon source, and uses PECVD to grow high-quality graphene under low-temperature and non-catalytic conditions without transfer. There is no relevant report yet.

Method used

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  • Method for preparing graphene through plasma-enhanced chemical vapor deposition
  • Method for preparing graphene through plasma-enhanced chemical vapor deposition
  • Method for preparing graphene through plasma-enhanced chemical vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Embodiment 1, prepare graphene single crystal on the surface of silicon dioxide / silicon substrate

[0035] In the first step, the silicon dioxide / silicon substrate is ultrasonically cleaned with ethanol, acetone, and ionized water in sequence, and then dried;

[0036] In the second step, the substrate cleaned in the first step is placed in the middle of a clean quartz tube, and then the quartz tube is placed in a double-temperature zone electric furnace, so that the substrate in the quartz tube and the activated solid carbon are respectively located The central areas of the dual temperature zone electric furnaces are evacuated to vacuum.

[0037] The third step is to heat the temperature of the central area of ​​the electric furnace where the solid carbon is located to 400°C, heat the temperature of the central area of ​​the electric furnace where the substrate is located to 600°C, and pass hydrogen gas at a flow rate of 20 sccm for 20 minutes;

[0038] The fourth step...

Embodiment 2

[0041] Embodiment 2, prepare graphene film on silicon dioxide / silicon substrate surface

[0042] The preparation method is basically the same as that of Example 1, except that the substrate temperature is 650°C.

[0043] The atomic force microscope photograph of the product is as Figure 5 As shown, it can be observed that compared with Example 1, after the growth temperature increases, the density of graphene nanocrystal grains increases, and the grains contact each other and cover the entire substrate.

Embodiment 3

[0044] Embodiment 3, graphene film is prepared on the surface of alumina

[0045] The preparation method is basically the same as that of Example 1, except that the substrate is alumina, and the substrate temperature is 650°C.

[0046] The atomic force microscope photograph of the product is as Figure 6 As shown, it can be observed that the product morphology is similar to that of Example 2, and the graphene nanocrystal grains are in contact with each other and cover the entire substrate.

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Abstract

The invention belongs to the technical field of graphene preparation, and particularly relates to a method for preparing graphene through plasma-enhanced chemical vapor deposition. Solid carbon is used as a carbon source, and a plasma-enhanced chemical vapor deposition method is utilized for growing graphene. The method comprises the steps that 1, a substrate and an activated solid carbon are placed into different temperature regions in a plasma-enhanced chemical vapor deposition device for vacuumizing; 2, the temperature regions where the substrate and activated solid carbon are located are heated to reach the corresponding temperature, and gas is introduced; 3, a plasma generator is turned on to enable graphene to grow; and 4, a heating power source is turned off, gas is continuously introduced, rapid cooling is performed to the room temperature, and the graphene grows on the surface of the substrate uniformly. According to the method, the solid carbon has wide sources, the cost is low, the growth temperature is low, the selective range of the substrate is wide, and the complete and high-quality single-layer or multi-layer graphene can be obtained.

Description

technical field [0001] The invention belongs to the technical field of graphene preparation, in particular to a method for preparing graphene by plasma-enhanced chemical vapor deposition. Background technique [0002] Graphene is a new carbonaceous material with a two-dimensional honeycomb lattice structure formed by densely packed carbon atoms, with a thickness of only one or a few atomic layers. Due to its excellent mechanical, thermal, optical, electrical and other properties, it is expected to be widely used in the fields of transistors, transparent conductive films, sensors, composite functional materials, and energy storage. [0003] At present, there are many methods for preparing graphene, and the most commonly used methods are mechanical exfoliation, chemical exfoliation, redox, epitaxial growth, and chemical vapor deposition (CVD). Among them, the ordinary CVD method is simple to operate, and the quality of the prepared graphene is also high, but this method can o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/513C23C16/26
Inventor 魏大程李科夏冬云李孟林蔡智刘冬华亓国强曹敏
Owner FUDAN UNIV
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