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A flexible strain sensor based on ultralong tellurium microwires

A technology of strain sensor and micron wire, applied in the direction of electric/magnetic solid deformation measurement, electromagnetic measurement device, etc., can solve the problems of high cost and complicated device, and achieve the effect of low cost and simple preparation

Inactive Publication Date: 2017-09-29
UNIV OF SCI & TECH BEIJING
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Complex device and high cost

Method used

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  • A flexible strain sensor based on ultralong tellurium microwires
  • A flexible strain sensor based on ultralong tellurium microwires
  • A flexible strain sensor based on ultralong tellurium microwires

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Embodiment Construction

[0022] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0023] In the present invention, the ultra-long tellurium micron wire is prepared by a hydrothermal method. Step 1. dissolving 0.001mol of tellurium dioxide in 30ml of sodium hydroxide solution with a concentration of 1mol / L is placed in a beaker to obtain a mixed solution of A for subsequent use;

[0024] Step 2. Dissolve 0.15g of sodium borohydride in 30ml of sodium hydroxide solution with a concentration of 1mol / L, put it in a beaker, add 0.5g of dodecylsulfonic acid, and stir fully to obtain B mixed solution, which is set aside ;

[0025] Step 3. Mix A mixture with B mixture, stir well, pour into 100ml polytetrafluoroethylene liner, add deionized water to dilute to 80ml, cover, put into stainless steel reaction kettle, at temperature React at 185°C for 24 hours. After the reaction, wash, filter, and dry to obtain tellurium microwires. att...

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Abstract

The present invention is a flexible strain sensor based on ultra-long tellurium micro-wires, comprising a sensing body material, a packaging material, an electrode and a flexible polymer matrix. The main material used in the patent of the present invention is a single ultra-long tellurium micro-wire, which is different from the previous semiconductor materials, mainly because of the high current responsiveness when there is strain at a small voltage, suitable for detection, and a flexible substrate is used. , a large strain range can be achieved. It can be used for the detection of material matrix damage and the detection of compressive stress and strain in different directions.

Description

technical field [0001] The invention relates to a sensing device, in particular to a flexible strain sensor based on an ultralong semiconductor tellurium micron wire. Background technique [0002] Strain sensors are widely used in micro-electromechanical systems, material damage detection, life sciences, etc. The main use is the piezoresistive effect and piezoelectric effect of the material. The piezoresistive effect refers to the change in resistance of a material when it is subjected to pressure. The piezoelectric effect is due to the polarization of electric charges after being pressed to produce a voltage. Piezoelectric materials mainly detect voltage, but often the voltage is very small, and a large compressive stress is applied. Semiconductor materials are mainly used in piezoresistive materials, and semiconductor materials with better conductivity, when subjected to compressive stress, the resistance changes and the current signal is easily detected. [0003] Tell...

Claims

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Application Information

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IPC IPC(8): G01B7/16
Inventor 党智敏梁涛查俊伟
Owner UNIV OF SCI & TECH BEIJING
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