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A kind of memory and its manufacturing method

A manufacturing method and memory technology, applied in electrical components and other directions, can solve the problems of uncertain resistance value distribution of high and low resistance values ​​of phase change memory, and achieve the effects of low power consumption, high density and large capacity

Active Publication Date: 2018-09-25
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a memory and its manufacturing method, which is used to solve the uncertainty of the high and low resistance values ​​of the phase change memory within a certain range and the certain resistance value distribution in the prior art. Phenomenon and the problem of generating multiple conductive channel morphologies in electro-resistive memory

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  • A kind of memory and its manufacturing method
  • A kind of memory and its manufacturing method
  • A kind of memory and its manufacturing method

Examples

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Embodiment 1

[0047] The present invention provides a memory, which at least includes: figure 1 The substrate 10 shown and the bottom electrode 11 formed on the upper surface of the substrate 10; preferably, the substrate is a semiconductor substrate, and the substrate in this embodiment is a silicon substrate; preferably, the The material of the bottom electrode 11 is a metal conductive material; as figure 2 As shown, the memory also includes a dielectric layer 12 located on the bottom electrode 11, preferably, the material of the dielectric layer 12 includes SiO 2 、SiN x 、AL 2 o 3 or ZrO 2 any of the. The material of the dielectric layer 12 in the present embodiment is SiO 2 ; Further preferably, the thickness of the dielectric layer is 100nm-300nm; as image 3 As shown, the dielectric layer 12 is provided with through holes 13, such as Figure 4 As shown, the through hole 13 is filled with metal, preferably, the diameter of the through hole is 50nm-300nm; the material of the me...

Embodiment 2

[0060] The difference between the memory in this embodiment and the memory in Embodiment 1 is that the composite storage structure is different. In this embodiment, the composite storage structure includes an oxide on the upper surface of the dielectric layer and an oxide on the The chalcogenide compound 141 on the upper surface of the oxide 142 , that is, the oxide and the chalcogenide compound in the composite storage structure in this embodiment and the oxide and the chalcogenide compound in the first embodiment are exactly upside down. In this embodiment, the two-layer stacked structure constituting the composite storage structure includes: an oxide located on the upper surface of the dielectric layer and in contact with the metal in the through hole, and a chalcogenide compound located on the upper surface of the oxide ; the oxide and the chalcogenide are in contact with each other.

[0061] Meanwhile, the method for forming the composite memory structure in this embodime...

Embodiment 3

[0065] This embodiment provides a memory, which at least includes: figure 1 The substrate 10 shown and the bottom electrode 11 formed on the upper surface of the substrate 10; preferably, the substrate is a semiconductor substrate, and the substrate in this embodiment is a silicon substrate; preferably, the The material of the bottom electrode 11 is a metal conductive material; as figure 2 As shown, the memory also includes a dielectric layer 12 located on the bottom electrode 11, preferably, the material of the dielectric layer 12 includes SiO 2 、SiN x 、AL 2 o 3 or ZrO 2 any of the. The material of the dielectric layer 12 in the present embodiment is SiO 2 ; Further preferably, the thickness of the dielectric layer is 100nm-300nm; as image 3 As shown, the dielectric layer 12 is provided with through holes 13, such as Figure 4 As shown, the through hole 13 is filled with metal, preferably, the diameter of the through hole is 50nm-300nm; the metal in the through hol...

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Abstract

The present invention provides a memory which comprises a substrate, a bottom electrode and a dielectric layer which are sequentially formed on the substrate, a composite storage structure on the dielectric layer and a top electrode on the composite storage structure. The invention also provides the manufacturing method of the memory. The method comprises a step of forming the bottom electrode and the dielectric layer on a cleaned substrate, a step of making a through hole on the dielectric layer, and a step of forming the composite storage structure formed by a sulfur compound and an oxide and the top electrode on the composite storage structure on the dielectric layer. The memory of the invention has the characteristics of phase change and resistance switching, the problem of uneven defects under high density storage oxide material nanoscale is made up, the oxide vacant passage formed in the oxide material can promote the threshold change of a sulfur compound material, thus the high and low resistance values are increased, the improvement of the yield and reliability of the storage unit is facilitated, the memory has the characteristics of good stable repeatability, a small structure change, large capacity, high density and low power consumption and is suitable for large-scale industrial production.

Description

technical field [0001] The invention relates to the field of semiconductor memory devices and their preparation, in particular to a resistive variable memory realized by using chalcogenide compound materials and oxide materials and a manufacturing method thereof. Background technique [0002] The rapid development of the semiconductor industry in the past 20 years has greatly improved the computing and image processing capabilities of processors. Whether it is mobile electronic devices in people's hands or desktop office equipment, they all have a variety of powerful and rich functions. The fast processing and computing speed of contemporary computer systems puts forward higher requirements for memory, but the development process of memory is relatively lagging behind, and it has increasingly become a bottleneck that is difficult to break through in the development of current electronic equipment. The current mainstream storage architecture uses static random access memory (...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 宋志棠吴良才纪兴龙朱敏孟云曹良良周夕淋任堃封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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