Method for manufacturing substrate for photovoltaic power generation device, and manufacturing device for substrate for photovoltaic power generation device
A technology of a power generation device and a manufacturing method, which is applied in photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of increasing the cost of chemical solution, speeding up the replacement cycle of etching solution, etc., and achieve the effect of low light reflectivity
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[0032] This embodiment relates to cleaning of organic impurities and metal impurities that are pollutants that adhere to the surface of a silicon substrate containing single crystal silicon and prevent the formation of texture on the surface of the silicon substrate, and texture on the surface of the silicon substrate by wet etching. Formation.
[0033] First, a photovoltaic power generation device manufactured using the method of manufacturing a substrate for a photovoltaic power generation device according to this embodiment will be described. figure 1 and figure 2 It is a figure showing the photovoltaic power generation device manufactured using the photovoltaic power generation device substrate formed by the manufacturing method of the photovoltaic power generation device board|substrate concerning this embodiment, figure 1 It is a sectional view of the main part of the solar power generation device, figure 2 It is a top view of the solar power generation device. exis...
Embodiment 1
[0078] First, by immersing the p-type single crystal silicon substrate without removing the damaged layer on the surface after slicing into a cleaning solution containing an oxidizing agent for 3 minutes, the natural oxide film covering the surface of the p-type single crystal silicon substrate The attached pollutants, ie, organic impurities and metal impurities, are removed, and the P-type single crystal silicon substrate is cleaned (step S10). For the cleaning liquid containing an oxidizing agent, hydrogen peroxide water (hydrogen peroxide (peroxide)) having a liquid temperature of 55° C. and a concentration of 0.1% by volume was used.
[0079] Next, the P-type single crystal silicon substrate is lifted from the hydrogen peroxide water and washed with water to rinse the hydrogen peroxide water adhering to the surface of the P-type single crystal silicon substrate (step S20 ).
[0080] Next, by immersing the P-type single-crystal silicon substrate in an alkaline aqueous solut...
Embodiment 2
[0085] In the substrate cleaning of the P-type single crystal silicon substrate using hydrogen peroxide water, the concentration of hydrogen peroxide water, cleaning temperature, cleaning time, etc. affect the cleaning effect. Therefore, first, in order to investigate the influence of cleaning temperature on the cleaning ability when the concentration of hydrogen peroxide water is 0.1% by volume, hydrogen peroxide at temperatures of 5 conditions of 20°C, 40°C, 55°C, 70°C, and 80°C were used. A p-type single crystal silicon substrate (substrate A) with a specific manufacturing history was cleaned with water, and then textured, and the appearance of the texture was compared. Except having changed the temperature of hydrogen peroxide water, it experimented similarly to Example 1. show the result in Figure 8 middle. Figure 8 It is a characteristic diagram showing the occurrence rate (%) of defects in the texture forming process when the P-type single crystal silicon substrate ...
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