Packaging technology of highly-reliable surface mounting glass-packaged diode

Abstract

The invention discloses a packaging technology of a highly-reliable surface mounting glass-packaged diode. The diode comprises a glass housing, a chip arranged in the glass housing and lead-out ends sleeving two ends of the glass housing. A soldering sheet is arranged between each of the lead-out ends and the chip. The lead-out ends are bonded to the glass housing, the soldering sheets and the chip via the high-temperature metallurgical technology. The metallurgical bonding structure is advantaged by high reliability, resistance to big current impact and small thermal resistance, is wide in working temperature range (from -55 DEG C to 125 DEG C) and is anti-high temperature welding. Parameters will not be deteriorated after the metallurgical bonding structure is arranged at a temperature of 550 DEG C for 15 minutes. Thus, thermal matching in whole working temperature range of the product is achieved; nitrogen is used as protective gas during the whole process, so the diode can be safely produced without use of danger gas; the manufactured diode is small in installation size, high in assembly density and light; and operation is simple and batch production or large-scale production can be easily achieved.

Description

technical field [0001] The invention relates to a packaging process for diodes, in particular to a packaging process for highly reliable surface-mounted glass-sealed diodes, and belongs to the technical field of diode packaging. Background technique [0002] At present, the small current Schottky diodes used in large quantities are packaged in the form of axial lead glass package, which has large installation volume, heavy weight, and high lead resistance, resulting in increased volume and reduced reliability of the whole machine, which is no longer suitable for high-precision diodes. High-density, high-performance, and high-reliability requirements for weaponry systems. The surface-mounted low-current Schottky diode is a metal silicide-silicon contact semiconductor device made of a metal silicide (such as MoSi2) as the positive electrode and an N-type semiconductor as the negative electrode, using the potential barrier formed on the contact surface of the two. The chip bar...

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Problems solved by technology

[0003] At present, the connection method between the chip and the lead-out of the surface-mounted glass-encapsulated diode is crimping, that is, using external force (such as the deformation pressure of the shrapnel, the shrinkage force of the high-temperature deformation of the glass) to realize the mechanical contact between the chip and the lead-out. Low reliability, unable to meet long-term reliability requirements

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