A depletion mode vdmos device and its manufacturing method
A depletion type, device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as incompatibility, and achieve the effect of reducing equipment and process requirements, large current, and high integration.
Active Publication Date: 2019-03-29
FOUNDER MICROELECTRONICS INT
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Problems solved by technology
[0006] The present invention provides a depletion-type VDMOS device and a manufacturing method thereof, which are used to solve the problem that most of the depletion-type VDMOS tubes in the prior art are planar-type depletion-type VDMOS tubes, and most planar-type depletion-type MOS tubes are not suitable for use in Technical Problems Applied in Low Voltage Situations
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Embodiment 2
[0059] For the above-mentioned method flow, the embodiment of the present invention also provides a depletion-type VDMOS device, and the manufacturing method of the device can execute the above-mentioned method embodiment.
[0060] A depletion mode VDMOS device provided by an embodiment of the present invention such as Figure 10 As shown, it specifically includes: the body region of the second conductivity type and the source region of the first conductivity type formed on the epitaxial layer of the first conductivity type, the gate oxide layer and the polysilicon layer formed on the epitaxial layer of the first conductivity type, and the gate oxide layer and the dielectric layer generated on the surface of the polysilicon layer, as well as the contact hole and the metal layer,
[0061] It also includes: an inclined trench, and a first conductivity type doped channel region formed by ion doping the inner sidewall of the inclined trench;
[0062] Wherein, for the inclined tre...
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Abstract
The invention discloses a depletion-type VDMOS device and a manufacturing method therefor. The method comprises the steps: generating a first oxide layer on a first conductive type epitaxial layer after generating a second conductive type body region on the first conductive type epitaxial layer; carrying out the photoetching of a mask pattern for trench etching on the first oxide layer, and carrying out the etching of the first oxide layer according to the mask pattern; enabling the first oxide layer which is not etched to serve as a mask etching inclined trench; carrying out the ion doping of an inner side wall of the inclined trench, and generating a first conductive type doping trench region. The method simplifies the preparation technology of a doping trench region, and a manufactured trench depletion-type VDMOS device can be used in a low-voltage occasion, thereby solving a technical problem in the prior art that most of flat-type depletion-type MOS tubes are not suitable for low-voltage occasions.
Description
technical field [0001] The invention relates to the field of semiconductor devices, in particular to a depletion-type VDMOS device and a manufacturing method thereof. Background technique [0002] VDMOS (Vertical Double-diffusion Metal-Oxide-Semiconductor, vertical double-diffusion field-effect transistor) devices can be divided into enhancement VDMOS and depletion VDMOS according to the relationship between the channel and the voltage. When the gate voltage of the enhancement VDMOS is 0V, there will be no current flow between the drain / source, and when the gate voltage VGS of the depletion VDMOS device is 0V, there will be current flow between the drain / source. This is because the channel region formed by low-concentration doping in the substrate surface layer of the depletion-type VDMOS device can induce the majority carriers opposite to the substrate doping type, which is equivalent to the source and drain of the channel region. Shorted together, even if VGS is 0V, once ...
Claims
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IPC IPC(8): H01L29/78H01L29/06H01L21/336
Inventor 赵圣哲马万里
Owner FOUNDER MICROELECTRONICS INT