Tunable narrow linewidth semiconductor laser

Abstract

The invention provides a tunable narrow linewidth semiconductor laser which comprises a distributed feedback semiconductor laser, a current driver, a first temperature controller, a polarization maintaining fiber ring, a polarization maintaining fiber coupler, a polarization maintaining fiber grating Fabry-Perot cavity, a second temperature controller, a polarization maintaining fiber adjustable attenuator and a heat insulation and vibration isolation shell. According to the laser, the transmission peak of the fiber grating Fabry-Perot cavity is utilized to carry out optical self injection locking on the semiconductor laser, the noise suppression of the semiconductor laser is realized, the narrow linewidth quasi-continuous tunable laser output is realized through adjusting semiconductor laser temperature and current, and the tunable narrow linewidth semiconductor laser has the advantages of simple optical path establishment, compact structure, lightweight, and good robustness.

Description

technical field [0001] The invention relates to a semiconductor laser, in particular to a tunable narrow-linewidth semiconductor laser. The device can be applied to the fields of laser atom cooling, laser radar, optical fiber sensing and the like. Background technique [0002] Due to its advantages of stability, reliability and low cost, narrow-linewidth semiconductor laser sources play an important role in frontier basic disciplines and high-tech fields such as synthetic aperture laser radar, coherent laser communication, high-resolution spectroscopy, fiber optic hydrophones, and fiber optic gyroscopes. and a wide range of application requirements. At present, the line width of semiconductor lasers is mainly narrowed by introducing optical feedback from external frequency-selective components such as high-precision resonators and gratings. After decades of development, the line width of semiconductor lasers has been greatly narrowed. The linewidth of the laser output direc...

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Problems solved by technology

[0006] The third prior solution is to use fiber grating, erbium-doped fiber and semiconductor gain chip to form a hybrid external cavity semiconductor laser. The fiber grating is used as a passive frequency selection element to suppress the noise of the laser. The self-induced fiber grating narrow-band filter produced by the effect ensures the single longitudinal mode lasing of the laser, and uses the long radiation life of Er3+ ions to improve the long-term stability of the laser. The laser linewidth output by this scheme is 2.26kHz, and the long-term frequency stability is 11Hz, but the length of the erbium-doped fiber used in this scheme is relatively long, and strict alignment between the semiconductor gain chip and the fiber is required, so the stability is poor, and it can only be realized in the laboratory at present, and there is no integrated device [MamounWahbeh ,RamanKashyap.Purityofthesinglefrequencymodeofahybridsemiconductor-fiberlaser.OpticsExpress,vol.23,16084-16095,2015】

[0007] The above solutions basically need to accurately calibrate the relative position of the semiconductor chip and the external feedback element, which is difficult to calibrate in actual operation, and the frequency tuning mostly depends on the cavity length change caused by the change of the overall temperature, the tuning speed is slow, and the laser Only work in a fixed current range at a specific temperature to ensure narrow line width operation characteristics

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