Surface passivation technology of crystalline silicon solar cell
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A technology of solar cells and solar cells, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of decreased passivation effect and long oxidation time, so as to reduce the packaging loss of components, improve conversion efficiency, and solve the problems of FF deterioration Effect
Inactive Publication Date: 2016-03-02
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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However, due to the high temperature of 1000°C required in the thermal oxidation process and the long oxidation time, it has not been widely used in photovoltaic indu
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Embodiment 1
[0028] 1. Silicon wafers in alkaline (NaOH or KOH) or acidic solution (HF+HNO 3 ) after velvet making, wash, dry, and the velvet surface size is within 5um;
[0029] 2. Diffusion of high-temperature phosphorus is carried out in the diffusion furnace, the diffusion resistance is 80Ω / □, and the surface concentration is 6*10 20 atom / cm 3 , the junction depth is 300nm, after forming the pn junction, perform wet etching to remove the back junction and PSG;
[0030] 3. Oxidation is carried out in a high-temperature furnace at a temperature of 750°C and an oxidation time of 15 minutes. After oxidation, the surface concentration is 1.5*10 20 atom / cm 3 , the junction depth is 400nm;
[0031] 4. Deposit the anti-reflection layer on the front side, using PECVD (introducing SiH 4 , NH 3 and N 2 O) Deposit SiNx / SiNy (or SiOx / SiNx / SiNy or SiNx / SiNy / SiOxNy or a stacked structure of SiOx, SiNx and SiOxNy) on the emission region, with a film thickness of 70-85nm and a refractive index o...
Embodiment 2
[0035] In step 3 of Example 1, the oxidation temperature is 700°C, and the oxidation time is 15 minutes. After oxidation, the surface concentration is 2*10 20 atom / cm 3 , the junction depth is 380nm, and other processes are the same as in Embodiment 1.
Embodiment 3
[0037] In the second step in Example 1, the diffusion resistance is 60Ω / □, and the surface concentration is 1.5*10 21 atom / cm 3 , junction depth 400nm, step 3, oxidation temperature 750°C, oxidation time 15min, after oxidation, surface concentration 5*10 20 atom / cm 3 , the junction depth is 550nm, and other processes are the same as in Embodiment 1.
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Abstract
The invention discloses a surface passivation technology of a crystalline silicon solar cell. The surface passivation technology specifically comprises the following two processes: (a) a low-temperature surface thermal oxidation process and (b) a surface oxidizing and doping process, wherein in the low-temperature surface thermal oxidation process, the oxidation temperature is controlled under 800 DEG C on the premise that excellent surface passivation quality is ensured, a dead layer formed in a diffusion process is activated, and good matching with an emitter junction diffusion process is achieved; and in the surface oxidizing and doping process, impurity doping is simultaneously carried out in an oxidizing process, and doped impurities are identical with emitter junctions in conductive type. The surface passivation technology of the crystalline silicon solar cell has the advantages that the conversion efficiency of the cell is improved, and the assembly packaging loss is effectively lowered; in addition, the oxidizing process can be applied in the case that the square resistance of the emitter junctions is higher than 100 [omega], and the FF deterioration problem of the PERA cell is solved.
Description
technical field [0001] The invention relates to the technical field related to the manufacture of crystalline silicon solar cells, in particular to a surface passivation process for crystalline silicon solar cells. Background technique [0002] SiO 2 The thin film can effectively passivate the interface state and is an ideal material for surface passivation; the PERL battery proposed by the University of New South Wales with an efficiency of 25.0% is based on SiO 2 Typical representative of surface passivation. However, because the thermal oxidation process requires a high temperature of 1000°C and the oxidation time is long, it has not been widely used in photovoltaic industrialization. For this reason, people began to adopt a wet oxidation process that can be carried out at a lower temperature, but the passivation effect also decreased. Therefore, the development of a thermal oxidation process that can be carried out at low temperature is the key to realize its industri...
Claims
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