Method and device for preparing sheet-shaped monocrystallines through temperature field gradient horizontal moving method
A technology of horizontal movement, flaky single crystal, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of poor quality, slow crystal growth, etc., to achieve high yield, low production cost, crystal The effect of high utilization
Inactive Publication Date: 2016-03-16
LUOYANG SANHEDESHENG SAPPHIRE CRYSTAL MANUFACTORY CO LTD
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Problems solved by technology
[0004] Aiming at the problems of slow crystal growth and poor quality caused by the inability to accurately control the crystal growth temperature in the sapphire production process of the above-mentioned prior art, the present invention provides a method and device for preparing flaky single crystals by a temperature field gradient horizontal movement method
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[0022] The present invention will be further elaborated below in combination with specific embodiments.
[0023] A method for preparing flaky single crystals by the method of temperature field gradient horizontal movement. The resistive heating element is horizontally arranged on the upper and lower sides of the flat structure crucible, and the furnace is divided into a plurality of relatively independent temperature chambers in the horizontal direction through the partition plate. Each temperature zone is heated independently, measured independently, and controlled independently. Through the control of temperature or heating power in different temperature zones, the furnace can show temperature or power gradient changes in the horizontal direction, and the crucible, heating element, and crystal are fixed. In the case of different temperature zones, through the temperature control of different temperature zones and the continuous movement of the temperature field gradient or th...
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Abstract
The invention relates to a method and device for preparing sheet-shaped monocrystallines through a temperature field gradient horizontal moving method. A furnace is cut into a plurality of relatively independent temperature regions through temperature region separation plates in the horizontal direction. Each temperature region achieves independent heating, independent temperature measurement and independent control. The furnace shows certain temperature gradient or power gradient in the horizontal direction through temperature control or power control of different temperature regions. The temperature gradient required by continuous moving of a crystal growth interface is met through temperature control and continuous moving of the temperature filed gradient or heating power control and continuous moving of the power gradient of different temperature regions in a condition that acrucible, a heat-generating body and crystals are not changed. raw material automatic heating, automatic inoculation and shouldering and automatic crystal growth are achieved through multi-temperature-region linkage temperature control, and simulated graphical representation of the crystal growth interface is achieved. The device is simple in structure and is convenient and practical.
Description
technical field [0001] The invention relates to the technical field of single crystal preparation, in particular to a method and device for preparing sheet-like single crystals by a temperature field gradient horizontal movement method. Background technique [0002] Sapphire α-Al 2 o 3 Single crystal has excellent optical, mechanical, thermal, dielectric, corrosion resistance and other properties. It has high light transmittance and wide transmission band in visible and infrared bands. Compared with many other optical window materials, it is more stable. Excellent chemical and thermodynamic properties, such as acid and alkali corrosion resistance, high temperature resistance, high hardness, high tensile strength, high thermal conductivity and remarkable thermal shock resistance. The above properties make sapphire materials widely used in wide-bandgap semiconductor materials such as gallium nitride substrates, femtosecond laser matrix materials, military infrared windows, a...
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IPC IPC(8): C30B29/20C30B29/64C30B11/00
CPCC30B29/20C30B11/003C30B11/006C30B29/64
Inventor 李豪周森安徐军吴锋唐慧丽安俊超李县辉
Owner LUOYANG SANHEDESHENG SAPPHIRE CRYSTAL MANUFACTORY CO LTD