Quantum dot film and preparation method thereof, patterning method of quantum dot film and display
A quantum dot film and quantum dot technology, which is applied in the field of flat panel display, can solve the problems that quantum dots cannot be effectively dispersed, quantum dots have low luminous brightness, and are easy to quench.
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[0061] Such as figure 2 As shown, another aspect of the embodiments of the present invention provides a method for preparing a quantum dot film, the preparation method comprising the following steps:
[0062] Step 1: Completely dissolve the quantum dots in the dispersant to obtain a quantum dot solution.
[0063] In this step, more than 0 and less than or equal to 60 parts of quantum dots are completely dissolved in 5-90 parts of dispersant to obtain a quantum dot solution, wherein the quantum dots can be CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, A mixture of at least one or two or more of HgS, HgTe, GaN, GaAs, InP, InAs, the dispersant can choose chloroform, tetrahydrofuran, methylene chloride, toluene, n-hexane, methanol, ethanol, propanol, butanol, At least one or a mixture of two or more of acetone, dioxane, dimethylformamide and dimethyl sulfoxide. The weight part of the dispersant added is preferably 20-60 parts.
[0064] Step 2: mixing resin, monomer containing unsaturated ...
Embodiment 1
[0087] Dissolve 0.011g of quantum dots in 200 μL of dispersant, ultrasonically dissolve the quantum dots completely to obtain a quantum dot solution; then add the quantum dot solution dropwise to 200 μL of photoresist mother liquor (containing resin, unsaturated double bond Monomer, photoinitiator, silicon coupling agent, auxiliary agent and solvent), ultrasonic 10 minutes, obtain quantum dot spin-coating solution; Coat quantum dot spin-coating solution with the coating speed of 6 revolutions / second, obtain smooth and uniform Quantum dot film with a film thickness of 1.8 μm.
[0088] The quantum dots and the photoresist mother liquor in Example 1 were converted, and the solid content of the photoresist mother liquor after conversion was 22.9%; the weight part of the red quantum dots in the dry film after removing the solvent was 20%.
Embodiment 2
[0090] Dissolve 0.017 g of quantum dots in 200 μL of dispersant, ultrasonically dissolve the quantum dots completely to obtain a quantum dot solution; then add the quantum dot solution dropwise to 200 μL of photoresist mother liquor (containing resin, unsaturated double bond Monomer, photoinitiator, silicon coupling agent, auxiliary agent and solvent), ultrasonic 10 minutes, obtain quantum dot spin-coating solution; Coat quantum dot spin-coating solution with the coating speed of 6 revolutions / second, obtain smooth and uniform Quantum dot film with a film thickness of 1.6 μm.
[0091] The quantum dots and the photoresist mother liquor in Example 2 were converted, and the solid content of the photoresist mother liquor after conversion was 22.9%; the weight part of the red quantum dots in the dry film after removing the solvent was 27%.
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