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Preparation method for SiC nano wire decorated with Au nano particles

A nanoparticle and nanowire technology, which is applied in the field of preparation of low-dimensional semiconductor materials, can solve the problems of reducing the open electric field of SiC nanostructures, and achieve the effects of large-scale industrial production, strong controllability, and excellent photoelectric performance

Active Publication Date: 2016-03-23
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the existing research work mainly focuses on the control of SiC morphology and the doping modification of SiC nanowires to emit cathode materials. The open electric field of nanostructures is rarely reported in the literature

Method used

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  • Preparation method for SiC nano wire decorated with Au nano particles
  • Preparation method for SiC nano wire decorated with Au nano particles
  • Preparation method for SiC nano wire decorated with Au nano particles

Examples

Experimental program
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Embodiment 1

[0056] In this embodiment, Au nanoparticles modify the SiC nanowire field emission cathode, including a substrate and electrodes distributed on the substrate. At least part of the material in the electrode is a nanowire, and the nanowire is formed with Au nanoparticles on the nanowire. Au The size of the nanoparticles is 1 nm (the size of the Au nanoparticles can also be 2, 3, 4, 5, 6, 7, 8, 9, 10, 1.5, 2.5, 3.5, 4.5, 5.5, 6.5, 7.5, 8.5, 9.5 , 1.15, 2.35, 3.42, 4.37, 5.55, 6.78, 7.62, 8.88, 9.57 and other arbitrary values ​​within the range of 1-10nm).

Embodiment 2

[0058] In this embodiment, Au nanoparticles modify the SiC nanowire field emission cathode, including a substrate and electrodes distributed on the substrate. At least part of the material in the electrode is a nanowire, and the nanowire is formed with Au nanoparticles on the nanowire. Au The size of the nanoparticles is 1 nm (the size of the Au nanoparticles can also be 2, 3, 4, 5, 6, 7, 8, 9, 10, 1.5, 2.5, 3.5, 4.5, 5.5, 6.5, 7.5, 8.5, 9.5 . . , 0.6, 0.7, 0.8, 0.9 and any other value within the range of 0.05-1 microns).

Embodiment 3

[0060] In this embodiment, the SiC nanowire field emission cathode modified by Au nanoparticles includes a substrate and electrodes distributed on the substrate. At least part of the material in the electrode is a nanowire, and the nanowire includes a columnar body and a head formed at the end of the body. , wherein the head contains cobalt, the nanowire is formed with Au nanoparticles on the nanowire, the size of the Au nanoparticles is 1nm (the size of the Au nanoparticles can also be 2, 3, 4, 5, 6, 7, 8, 9, 10, 1.5, 2.5, 3.5, 4.5, 5.5, 6.5, 7.5, 8.5, 9.5, 1.15, 2.35, 3.42, 4.37, 5.55, 6.78, 7.62, 8.88, 9.57 and any other within the range of 1-10nm value); the diameter (maximum diameter) of the nanowire is 0.05 microns (the diameter of the nanowire can also be 0.07, 0.09, 0.12, 0.16, 0.23, 0.28, 0.32, 0.36, 0.45, 0.48, 0.52, 0.54, 0.63, 0.66, 0.73, 0.74, 0.85, 0.88, 0.91, 0.99, 1.0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 and any other value within the range of 0.05-1 mi...

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Abstract

The invention discloses a preparation method for an SiC nano wire decorated with Au nano particles, and the method comprises the following steps: a, preprocessing: carrying out the preprocessing of a precursor and a base body; b, nano wire preparation: jointly placing the precursor and the base body in a sintering atmosphere after preprocessing, carrying out the pyrogenic decomposition of the precursor in a protection atmosphere, carrying cooling, and growing a nano wire on the base body after preprocessing; c, nano wire decoration: forming Au nano particles on the nano wire, wherein the sizes of the Au nano particles are from 1nm to 10nm. The method is simple in preparation technology, is convenient to operate, and is lower in energy consumption than the prior art. The prepared nano wire is better in field emission capability.

Description

technical field [0001] The invention relates to a method for preparing low-dimensional semiconductor materials, in particular to a method for preparing SiC nanowires modified by Au nanoparticles. Background technique [0002] Since Professor Lijima from Japan discovered carbon nanotubes in 1991, semiconductor low-dimensional nanomaterials have become a research focus and focus in the field of nanotechnology. With the deepening of research and the advancement of technology, it is expected to provide an opportunity for a major breakthrough in the research and development of novel and efficient optoelectronic devices. Field emission is one of the intrinsic properties of low-dimensional nanomaterials. Studies have shown that nanostructures have excellent field emission properties that traditional materials do not have, and have great potential application prospects in the fields of display and vacuum electronics and other optoelectronic devices. However, the real application o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J9/02B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01J9/025
Inventor 杨为佑陈强陈善亮
Owner NINGBO UNIVERSITY OF TECHNOLOGY