Electron-accepting structures that can reduce surface oxidation of Aln cold cathodes

A surface oxidation and receiving structure technology, applied in the direction of circuits, electrical components, discharge tube main electrodes, etc., can solve the problems of affecting electron emission performance and aggravating the surface oxidation of AlN cold cathode materials, so as to improve electron emission performance and reduce hindrance , The effect of speeding up the development process

Active Publication Date: 2017-03-01
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially in the preparation process of field emission devices, it is necessary to grow silicon dioxide or silicon nitride insulating film on the surface of AlN by plasma enhanced chemical vapor deposition (PECVD). The surface oxidation of the cathode material affects its electron emission performance

Method used

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  • Electron-accepting structures that can reduce surface oxidation of Aln cold cathodes
  • Electron-accepting structures that can reduce surface oxidation of Aln cold cathodes

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Embodiment Construction

[0021] refer to figure 1 As shown, the present invention provides a kind of electron accepting structure that can reduce AlN cold cathode surface oxidation, comprises:

[0022] An n-type SiC substrate 11, the resistivity of the n-type SiC substrate 11 is 0.02-0.2Ω·cm, and the thickness is 200-500μm;

[0023] An n-type metal electrode 10, which is made on the lower surface of the n-type SiC substrate 11, the material of the n-type metal electrode 10 is Ni or Ni / Au, and the thickness of the Ni layer in the Ni or Ni / Au is 50- 200nm, the thickness of Au layer is 50-200nm; Ni or Ni / Au film is annealed to form ohmic contact, the annealing atmosphere is nitrogen or argon, the annealing temperature is 950°C, and the annealing time is 1-5min;

[0024] An AlN cold cathode 12, which is epitaxially grown on an n-type SiC substrate 11, the thickness of the AlN cold cathode 12 is 10-500nm, and the Si doping concentration is 1×1018-1×1020cm-3;

[0025] A metal anode 15, the metal anode 15 ...

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Abstract

The invention relates to an electronic receiving structure capable of reducing surface oxidation of an AIN cold cathode. The electronic receiving structure comprises an n-shaped SiC substrate, an n-shaped metal electrode, the AIN cold cathode, a metal anode, a silicon dioxide insulating layer, a high-voltage source and a galvanometer, wherein the n-shaped metal electrode is manufactured on the lower surface of the n-shaped SiC substrate; the AIN cold cathode extends outwards to grow on the n-shaped SiC substrate; the silicon dioxide insulating layer is manufactured on the metal anode, and an electronic transmitting-receiving window is formed in the middle of the silicon dioxide insulating layer; the metal anode on which the silicon dioxide insulating layer is manufactured is buckled on the surface of the AIN cold cathode; an anode of the high-voltage source is connected with the metal anode; an anode of the galvanometer is connected with the high-voltage source, and a cathode of the galvanometer is connected with the n-shaped metal electrode. According to the electronic receiving structure, the surface oxidation of an AIN cold cathode material can be reduced, so that the electron emission property of the AIN cold cathode material is improved.

Description

technical field [0001] The invention relates to an electron receiving device for reducing surface oxidation of an AlN cold cathode, which belongs to the field of field emission electronic devices in the vacuum electron technology. Background technique [0002] As a kind of Group III nitride semiconductor material, AlN has a wide band gap, up to 6.2eV, does not require Cs activation process, has negative electron affinity itself, and has almost all the characteristics required for field emission, including good chemical properties. With thermal stability, high melting point and thermal conductivity, large carrier mobility and high breakdown voltage, etc., it is an excellent cold cathode material. [0003] However, as a cold cathode material, AlN also has its own shortcomings, that is, due to the existence of Al atoms, the surface is easily oxidized to form an aluminum oxide film. The aluminum oxide film is not conductive and does not have negative electron affinity characteri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J1/304H01J1/38
Inventor 陈平赵德刚朱建军刘宗顺江德生杨辉
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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