The invention belongs to the technical field of
semiconductor thin film transistor preparation technology and relates to a method for preparing a thin-film
transistor based on a scandia high-k
dielectric layer. According to the method, firstly,
scandium nitrate is dissolved in de-ionized water and the obtained solution is stirred to form a precursor solution. The precursor solution is applied onto the cleaned surface of a low-resistance
silicon substrate through the spin-
coating process and the spin-
coating thickness is 5-10 nm. After that, a thin film generated through the spin-
coating process is baked and annealed to obtain a Sc2O3 film sample. Then, the
zinc nitrate and the
indium nitrate are respectively dissolved in de-ionized water and stirred to form an IZO
aqueous solution. The IZO
aqueous solution is applied onto the surface of the Sc2O3 film sample through the spin-coating process. After the spin-coating process, the film sample is cured and annealed at a low temperature to obtain an IZO channel layer. Finally, a
metal source and a drain
electrode are prepared on the IZO channel layer by means of a stainless steel
mask through the vacuum thermal-
evaporation process, so that a thin-film
transistor can be obtained. According to the overall technical scheme of the invention, the method has the advantages of low cost, simple process, reliable principle, good product performance, environment-friendly preparation and broad application prospect. By utilizing the method, the large-area preparation of high-performance thin-film transistors is realized.