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Boron doping method for silicon wafer

A boron-doped, silicon wafer technology used in the field of solar photovoltaics

Inactive Publication Date: 2016-03-23
HANS LASER TECH IND GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Based on this, it is necessary to provide a silicon chip boron doping method for the problem of how to improve the uniformity of the boron doping source

Method used

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  • Boron doping method for silicon wafer

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Embodiment 1

[0045] Put the N-type silicon chip into the texturing additive to react, control the reaction temperature to 80°C, and the reaction time to 20 minutes, so that the first surface and the second surface of the N-type N-type silicon chip 110 both have a pyramid-shaped textured structure, Texturing additives are: the mass ratio of alkali, isopropanol, additives and water is 2.5:10:0.5:87;

[0046] Spin-coat 0.1 gram of boron tribromide solution on the surface of N-type silicon wafer, and dry it, after drying, carry out laser scanning to the whole surface of the surface of N-type silicon wafer, laser scanning condition is: laser pulse width 30 Nanosecond, 532nm green pulse laser, 50W power, 10m / s scanning speed and 50μm spot diameter, forming the first p+ region on the surface, the sheet resistance of the first p+ junction in the first p+ region is 65Ω / □;

[0047] The N-type silicon chip is put into a mixed solution of hydrogen peroxide and hydrochloric acid (the volume ratio of ...

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Abstract

The invention relates to a boron doping method for a silicon wafer. The method comprises the following steps: carrying out texturing treatment on the surface of the silicon wafer and forming a boron doping source layer on the surface of the silicon wafer; carrying out laser treatment on the boron doping source layer to form a first p+ region by a first laser parameter; cleaning the surface of the silicon wafer and removing the residual boron doping source; and treating the first p+ region by a second laser parameter, and further diffusing the boron doping source in the first p+ region to form a second p+ region, wherein the width of a laser pulse in the second laser parameter is smaller than that in the first laser parameter. According to the boron doping method for the silicon wafer, the doping uniformity is improved; a low-concentration deep doping junction can also be achieved; and a short wave response is relatively obvious.

Description

technical field [0001] The invention relates to the field of solar photoelectric technology, in particular to a boron doping method for silicon wafers. Background technique [0002] A solar cell is a semiconductor device that converts the sun's light energy directly into electrical energy. Because it is a renewable resource and does not cause environmental pollution, it has been more and more widely used. [0003] In order to improve the photoelectric conversion efficiency of the sun, different kinds of solar cells have been developed. Among them, due to the advantages of long life, no attenuation and high conversion rate of N-type silicon wafers, N-type solar cells have attracted more and more attention. [0004] Generally, N-type solar cells are doped through furnace tube thermal diffusion. However, in this way, the uniformity of doping will be affected. Contents of the invention [0005] Based on this, it is necessary to provide a silicon wafer boron doping method f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/22H01L31/18
CPCH01L21/2225H01L31/1804Y02E10/547Y02P70/50
Inventor 张为国刘超刘成法张松
Owner HANS LASER TECH IND GRP CO LTD