A kind of quantum well semiconductor laser epitaxial structure and quantum well laser
An epitaxial structure and quantum well technology, applied in the structure of the active region and other directions, can solve the problems of rising threshold current, reducing the external quantum efficiency of the device, carrier leakage, etc., and achieving the effect of reducing the threshold current and improving the internal quantum efficiency.
Active Publication Date: 2018-10-19
SHENZHEN RAYBOW OPTOELECTRONICS +1
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The disadvantage of this active structure is that it inevitably causes a certain proportion of carriers to leak out of the quantum well and then undergo non-radiative recombination outside the quantum well region (see Figure 4 ), thereby reducing the external quantum efficiency of the device, and the threshold current will also increase
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[0028] refer to Figure 5 , in the first embodiment of the quantum well semiconductor laser epitaxial structure of the present invention, the laser epitaxial structure includes: an active layer 51 and a first cladding layer 52 respectively located on opposite sides of the active layer 51 and stacked with the active layer 51 and the second cladding layer 53; the active layer 51 includes a first waveguide layer 511, a first quantum well layer 512, a first quantum well layer 512, a first The second quantum well layer 513 and the second waveguide layer 514;
[0029] Wherein, the wavelength of the photons emitted during the radiative recombination of the carriers in the first quantum well layer 512 corresponds to the required output wavelength of the epitaxial structure, and the wavelength of the photons emitted during the radiative recombination of the carriers in the second quantum well layer 513 less than the output wavelength.
[0030] Wherein, the active layer 51 further inc...
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The present invention discloses a quantum well semiconductor laser epitaxial structure and a quantum well laser. The quantum well semiconductor laser epitaxial structure comprises an active layer, and a first cladding layer and a second cladding layer which are respectively located on both opposite sides of the active layer and are arranged in a stacking manner with the active layer; and the active layer comprises a first waveguide layer, a first quantum well layer, a second quantum well layer, and a second waveguide layer which are arranged in a stacking direction of the active layer, the first cladding layer and the second cladding layer, wherein a wavelength of photons emitted by carriers in the first quantum well layer during radiative recombination corresponds to an output wavelength desired by an epitaxial structure, and a wavelength of photons emitted by carriers in the second quantum well layer during radiative recombination is smaller than the output wavelength. According to the quantum well semiconductor laser epitaxial structure and the quantum well laser disclosed by the present invention, the escaped carriers are directly recycled by the second quantum well layer, internal quantum efficiency of the device is improved, and a threshold current of the device is reduced.
Description
technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a quantum well semiconductor laser epitaxial structure and a quantum well laser. Background technique [0002] Semiconductor laser materials are usually grown on corresponding substrate materials such as GaAs or InP by methods such as molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) according to a pre-designed structure. A typical semiconductor epitaxial structure includes an n-type cladding layer, an undoped active region and a p-type cladding layer, wherein the active region includes a light-emitting quantum well and a waveguide layer. figure 1 It is a schematic diagram of a typical 635nm quantum well laser epitaxy structure based on GaAs material, and Figure 2a -b is the change of the refractive index of the corresponding material along the growth direction. [0003] For the quantum well structure of the semiconductor quantum well...
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IPC IPC(8): H01S5/34
Inventor 仇伯仓胡海
Owner SHENZHEN RAYBOW OPTOELECTRONICS