Preparation method of silene

Abstract

The invention provides a method for preparing silene. The method specifically comprises: processing silicon blocks into a concave tapered silicon target; mounting the silicon target on a sputtering target of a cesium sputtering negative ion source; sputtering the silicon target by using cesium ions; leading out Si<2-> cluster negative ion beams generated by sputtering from extraction electrode extraction holes, wherein Si<2-> cluster negative ions are uniformly deposited on an Ag (111) substrate through scanning electric field after being accelerated by extraction electrode voltage; and putting a sample into a vacuum chamber, sputtering the surface of the sample by Ar<+> ions, and then carrying out annealing treatment on the sample in an ultrahigh vacuum to finish the preparation of silene. According to the preparation method provided by the invention, by using the advantages of low energy of a single atom of low-energy cluster negative ion beams, and an accurate and controllable dose, the silene can be prepared directly by virtue of a direct deposition method.

Description

technical field [0001] The invention relates to a crystal material, specifically a method for preparing silicene. Background technique [0002] Sicene is a two-dimensional nanomaterial in which silicon atoms are arranged in a planar honeycomb shape, and has a good two-dimensional crystal structure and electrical properties. Compared with graphene with zero band gap, silicene has a certain forbidden band width, so it has broad application prospects in the field of semiconductor electronic devices and optoelectronic devices. The current methods for preparing silicene include epitaxial growth and ion implantation. [0003] (1) Epitaxial growth. This method was used to prepare silicene for the first time in the world, that is, silicon source evaporation epitaxial growth method. The special layered structure of silicene requires the use of special substrate materials such as silver single crystals. However, when the evaporated atoms epitaxially grow silicene on the substrate,...

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Problems solved by technology

However, when the evaporated atoms epitaxially grow silicene on the substrate, due to the strong interfacial interaction, the silicene will be restructured, and the degree of warping of the atomic layer will change. Some atoms will rise and some atoms will fall. It leads to larger unit cells, reduced symmetry, or the formation of a few-layer structure, thereby destroying the Dirac-Fermi characteristics of silicene and affecting the performance of silicene film materials

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