Developing solution used for distinguishing P-type silicon material and N-type silicon material and distinguishing method

Abstract

The invention relates to a detection technology of semi-conductor silicon materials, in particular to a developing solution used for distinguishing a P-type silicon material and an N-type silicon material as well as a distinguishing method. The developing solution comprises nitric acid and hydrofluoric acid between which the volume ratio is 1 to (75 to 78), wherein the mass fraction of hydrofluoric acid is 35 to 40%; the mass fraction of nitric acid is 70 to 72%. A non-polycrystalline silicon material pickled with the developing solution is obvious in surface brightness-darkness comparison; the distinguished P-type silicon material and N-type silicon material can be seen clearly by naked eyes; spent acid can be reutilized to remove impurities on the surfaces of the silicon materials; the developing solution and the distinguishing method have the advantages that the distinguishing rate, the work efficiency, as well as the monocrystalline quality is improved, and the cost is reduced.

Description

technical field [0001] The invention relates to a detection technology for semiconductor silicon materials, in particular to a color developing solution and a method for distinguishing PN type silicon materials. Background technique [0002] The development of the solar photovoltaic industry in recent years has proved that monocrystalline silicon solar cells are one of the most important green energy sources for human beings in the future. Silicon single crystal with high-quality parameters is the basic condition for the production of high-efficiency solar cells. The existing chromogenic solution for sorting silicon materials can only distinguish low-concentration doped qualified silicon materials and high-concentration doped unqualified silicon materials, and cannot be used to distinguish P-type and N-type silicon materials; for example, Chinese Patent Publication No. CN101021481A discloses a chromogenic solution for detecting and sorting waste silicon materials, which bel...

AI Technical Summary

Problems solved by technology

The existing chromogenic solution for sorting silicon materials can only distinguish low-concentration doped qualified silicon materials and high-concentration doped unqualified silicon materials, and cannot be used to distinguish P-type and N-type silicon materials; for example, Chinese Patent Publication No. CN101021481A discloses a color-developing solution for detecting and sorting waste silicon materials, which belongs to the above-mentioned situation

[0003] In the existing process, it is a cumbersome task to test the conductivity type of a small piece of silicon material. If it is not tested and directly purified and re-pulled, it will affect the important quality parameter of the single crystal-lifetime, but if it is tested piece by piece, a day Only one kilogram of polysilicon material can be detected at most, and the efficiency is extremely low