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Boron phosphorous doped silicate glass (BPSG) dielectric layer preparation method, semiconductor device and electronic device

A borophosphosilicate glass and electronic device technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as failure and performance degradation of semiconductor devices.

Inactive Publication Date: 2016-03-30
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] After depositing the borophosphosilicate glass (BPSG) dielectric layer by the method described above, and then forming a contact hole in the dielectric layer, when the contact hole was inspected, it was found that due to the borophosphosilicate glass (BPSG) Voids usually exist in the dielectric layer, such as figure 1 As shown in the dotted box, it will cause the phenomenon of bridging (bridge) in the contact hole, which will reduce the performance of the semiconductor device or even fail.

Method used

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  • Boron phosphorous doped silicate glass (BPSG) dielectric layer preparation method, semiconductor device and electronic device
  • Boron phosphorous doped silicate glass (BPSG) dielectric layer preparation method, semiconductor device and electronic device
  • Boron phosphorous doped silicate glass (BPSG) dielectric layer preparation method, semiconductor device and electronic device

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Embodiment 1

[0030] Attached below Figure 2-3 The preparation method of the borophosphosilicate glass (BPSG) dielectric layer of the present invention is further described.

[0031] First of all, the current preparation method of the borophosphosilicate glass (BPSG) dielectric layer is completed through one deposition step, but the borophosphosilicate glass (BPSG) dielectric layer prepared by the method is subsequently formed in the contact hole. In the step, holes are easily formed at the bottom, resulting in bridging of metal interconnection structures, such as bridging between contact holes, such as figure 1 shown.

[0032] Through the analysis of a large number of examples and the analysis of secondary mass spectrometry (secondary ion mass spectroscopy, SIMS) data, the applicant found that the phosphorus content in the dielectric layer was very high due to the rapid increase of the flow rate of the phosphorus source and the boron source at the initial stage of deposition, resulting i...

Embodiment 2

[0063] The present invention also provides a semiconductor device, including the borophosphosilicate glass film prepared by the method described in Embodiment 1. Holes will not appear in the semiconductor device prepared by the method of the present invention, and bridging phenomenon will not occur in the contact holes.

Embodiment 3

[0065] The present invention also provides an electronic device, including the semiconductor device described in Embodiment 2. Wherein, the semiconductor device is the semiconductor device described in Embodiment 2, or the semiconductor device obtained according to the manufacturing method described in Embodiment 1.

[0066] The electronic device of this embodiment can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV set, VCD, DVD, navigator, camera, video recorder, voice recorder, MP3, MP4, PSP, etc. , can also be any intermediate product including the semiconductor device. The electronic device according to the embodiment of the present invention has better performance due to the use of the above-mentioned semiconductor device.

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Abstract

The invention relates to a boron phosphorous doped silicate glass (BPSG) dielectric layer preparation method, a semiconductor device and an electronic device. The method comprises a pre-deposition step and a main deposition step, wherein the flow of a phosphorus source in the pre-deposition step is smaller than the flow of a phosphorus source in the main deposition step, so that the content of phosphorus in the obtained BPSG dielectric layer is reduced. In order to solve the problems existing in the prior art, the invention provides a new BPSG dielectric layer deposition method. The method comprises the pre-deposition step and the main deposition step, wherein in the pre-deposition step, by reducing the flow of TEB and TEPO gases, and meanwhile, controlling the deposition time of the pre-deposition step, the problem of over-high concentration of phosphorus in the pre-deposition step is prevented, and meanwhile, the concentration of boron and phosphorus is allowed to be more uniform, so that generation of voids and the phenomenon of bridge of the BPSG dielectric layer in the follow-up contact hole formation step are eliminated.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular, the invention relates to a method for preparing a borophosphosilicate glass dielectric layer, a semiconductor device and an electronic device. Background technique [0002] With the continuous reduction in the size of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) devices, the semiconductor manufacturing process has entered the era of deep submicron, and has developed to ultra-deep submicron. However, with the continuous increase in the density of integrated circuits, semiconductor devices Higher performance and stability requirements are also put forward. [0003] In the process of preparing semiconductor devices, various thin films need to be deposited and formed. For example, when forming a metal interconnection structure, it is necessary to first deposit a pre-metal dielectric layer. There are many types of dielectric layers, among which boronphosphorousdopedSilicateGl...

Claims

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Application Information

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IPC IPC(8): H01L21/316H01L21/768
Inventor 李立春
Owner SEMICON MFG INT (SHANGHAI) CORP