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Silicon-based quantum dot display and fabrication method thereof

A technology of silicon-based quantum dots and a manufacturing method, which is applied in the manufacturing of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of poor light transmittance of aluminum films, etc. The effect of drive capability, high pixel resolution

Active Publication Date: 2016-03-30
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the silicon base is opaque, and the light transmittance of the aluminum film used as the cathode electrode is not good

Method used

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  • Silicon-based quantum dot display and fabrication method thereof

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specific Embodiment approach

[0026] A specific implementation of a silicon-based quantum dot display manufacturing method is as follows:

[0027] 1) According to the designed row and column pixel unit voltage or current drive circuit, make a silicon-based drive circuit on the semiconductor process line, and make aluminum (also Ag, Au or Ca, and their alloys) on the top layer as the cathode, and Surface planarization was performed using chemical mechanical polishing.

[0028] 2) Titanium dioxide (TiO 2 ) precursor solution is a solution prepared by dissolving titanium polymer in n-butane with a mass ratio of 5%; the titanium dioxide precursor solution is prepared on the cathode by methods such as spin coating, printing, and transfer to prepare an inorganic electron transport layer.

[0029] 3) Preparation of quantum dots: the surface of quantum dot particles prepared by high temperature metal method is coated with carboxyl groups, the quantum dots have a core-shell structure, the core is cadmium selenide,...

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Abstract

The invention discloses a silicon-based quantum dot display. A voltage or current drive circuit corresponding to rows and columns of pixel units is fabricated on a silicon substrate by a semiconductor technology; a cathode film corresponding to a pixel is fabricated on each pixel; and chemical-mechanical planarization polishing is carried out. An electron transport layer and a quantum dot light-emitting layer made of materials of TiO2, TiN and the like are fabricated on each polished cathode film; a CBP is fabricated on each quantum dot light-emitting layer as a hole transport layer; MoO<3> is taken as a hole injection layer; an ITO conductive layer is taken as a device anode; holes and electrons are promoted to be transported to the quantum dot light-emitting layers; and the holes and the electrons emit light after being compounded. A quantum dot light-emitting display device is formed after airtight sealing is carried out on a transparent substrate. The silicon-based quantum dot display has the advantages that a pixel drive circuit is fabricated on the silicon substrate; and relatively high pixel resolution and relatively high voltage or current driving capability can be obtained, so that the quantum dot light-emitting display with high brightness is obtained; and a wearable display miniature display with high resolution and high brightness is achieved.

Description

technical field [0001] The invention belongs to the field of semiconductors, in particular to a silicon-based circuit-based quantum dot light-emitting display and a manufacturing method thereof. Background technique [0002] Quantum dots (QDs) are a kind of zero-dimensional semiconductor nanocrystals. Due to energy level splitting and quantum confinement effects, etc., it is possible to change the luminescent color by adjusting the particle size of quantum dots, and there is no secondary absorption in luminescence. , high luminous efficiency, narrow emission peak and good monochromaticity. Based on quantum dot light-emitting LEDs (QLED, QuantumDots-LightEmittingDiode), CIE diagrams of almost any color can be created. [0003] Utilizing the light-emitting characteristics of QLED, it is made into a dot matrix pixel form, and a voltage or current signal is applied to the light-emitting unit through the driving circuit corresponding to each pixel, so that the light-emitting con...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L27/32
CPCH10K59/12H10K71/00
Inventor 张晓兵陈静雷威黄倩倩潘江涌
Owner SOUTHEAST UNIV