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Monocrystalline silicon growth ultrasonic wave oxygen control method

An ultrasonic and monocrystalline silicon technology, applied in the field of ultrasonic oxygen control for monocrystalline silicon growth, can solve the problems of difficulty in obtaining high magnetic field strength, large power consumption, and huge equipment investment.

Active Publication Date: 2016-04-13
SHANGHAI ADVANCED SILICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantage of magnetic field crystal pulling is that the equipment investment is huge, the power consumption is large, and it is difficult to obtain high magnetic field strength.

Method used

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  • Monocrystalline silicon growth ultrasonic wave oxygen control method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Growth diameter of 2 inches of single crystal silicon. The diameter of the quartz crucible is 155 mm, the diameter of the vibration head is 135 mm, and the distance between the vibration heads is 20 mm. After the polysilicon is completely melted, stand still for 3h. When the surface of the silicon liquid is still, the ultrasonic vibration head made of high-purity quartz material is inserted into the melt at an angle of 90o, and the depth is 10mm. Use 100% sine wave to measure the ultrasonic sound intensity at the predetermined position of the crystal growth bright ring. When the intensity exceeds 1000Pa, adjust the frequency and amplitude to make the intensity less than 1000Pa. After confirming that the ultrasonic amplitude is 1500kHz, turn off the ultrasonic wave. Before the start of isometric growth after the crystal shoulder is turned, start the ultrasonic input and start the crystal isometric growth at the same time. During the crystal growth process, the ultraso...

Embodiment 2

[0026] Growth diameter of 4 inches of single crystal silicon. The diameter of the quartz crucible is 210 mm, the diameter of the vibrating head is 190 mm, and the distance between the vibrating heads is 20 mm. After the polysilicon is completely melted, stand still for 3h. When the surface of the silicon liquid is still, the ultrasonic vibration head made of high-purity quartz material is inserted into the melt at an angle of 60o, and the depth is 10mm. The ultrasonic composition used includes: 60% sine wave, 20% square wave, and 20% sawtooth wave. Measure the ultrasonic sound intensity at the predetermined position of the bright ring of crystal growth. When the intensity exceeds 1000Pa, adjust the frequency and amplitude to make the intensity less than 1000Pa. After confirming that the ultrasonic amplitude is 1500kHz, turn off the ultrasonic wave. Before the start of isometric growth after the crystal shoulder is turned, start the ultrasonic input and start the crystal isom...

Embodiment 3

[0028] Growth diameter of 4 inches of single crystal silicon. The diameter of the quartz crucible is 210 mm, the diameter of the vibration head is 190 mm, and the distance between the vibration heads is 40 mm. After the polysilicon is completely melted, stand still for 3h. When the surface of the silicon liquid is still, the ultrasonic vibration head made of high-purity quartz material is inserted into the melt at an angle of 90o, and the depth is 10mm. The ultrasonic composition used includes: 60% sine wave, 30% square wave, and 10% sawtooth wave. Measure the ultrasonic sound intensity at the predetermined position of the bright ring of crystal growth. When the intensity exceeds 1000Pa, adjust the frequency and amplitude to make the intensity less than 1000Pa. After confirming that the ultrasonic amplitude is 1000kHz, turn off the ultrasonic wave. Before the start of isometric growth after the crystal shoulder is turned, start the ultrasonic input and start the crystal isom...

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Abstract

The invention discloses a monocrystalline silicon growth ultrasonic wave oxygen control method. In a device of the monocrystalline silicon growth ultrasonic wave oxygen control method, the surface of silicon melt is provided with a set of ultrasonic wave, and a set of ultrasonic wave vibration heads are uniformly distributed on a circle coaxial to silicon single crystal rods and a crucible; the distance between each pair of ultrasonic wave vibration heads is controlled to be 1.5 to 2 times of the distance from a corresponding ultrasonic wave vibration head to the crucible wall; the ultrasonic wave vibration heads are made of a high-purity quartz material, and are stretched to be 10 to 15mm below the surface of the silicon melt; and the depth is maintained in the process of crystal growth. In silicon single crystal equal-diameter growth process, ultrasonic wave oscillation is introduced so as to inhibit heat natural convection in a high oxygen concentration zone around the crucible, accelerate flow of the silicon melt from the center to the surrounding caused by crystal rotation, promote volatilization of oxygen on a free surface, reduce solubility of Si-O gas in the silicon melt, promote volatilization of Si-O on the surface of the silicon melt, and control oxygen content of obtained crystals.

Description

technical field [0001] The invention relates to an ultrasonic oxygen control technology for growing single crystal silicon, in particular to the control of the oxygen content in the silicon melt, in particular to introducing ultrasonic waves into the silicon melt to oscillate the silicon melt to reduce the oxygen element in the silicon melt solubility. Background technique [0002] In the manufacturing process of monocrystalline silicon, the Czochralski method (Czochralski, abbreviated as CZ) is most commonly used. In the Czochralski method, polycrystalline silicon is filled in a quartz glass crucible (also called a quartz crucible), and then heated and melted to form silicon Melt, the seed crystal is immersed in the silicon melt and then rotated upwards to pull it, and the silicon solidifies and crystallizes at the interface between the seed crystal and the molten solution to form a single crystal silicon rod (ingot). [0003] Oxygen is the impurity with the highest co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/06
CPCC30B15/00C30B29/06
Inventor 张俊宝宋洪伟
Owner SHANGHAI ADVANCED SILICON TECH CO LTD
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