One-way low-voltage TVS device and manufacturing method thereof

Abstract

The invention discloses a one-way low-voltage TVS device which comprises an N-type silicon wafer. A P1 doped region and a P2 doped region are arranged in the N-type silicon wafer. An N1+ doped region is arranged in the P1doped region. An N2+ doped region is arranged in the P2 doped region. An N3+ doped region is arranged on the side, away from the P1 doped region, of the P2 doped region in the N-type silicon wafer. An oxidation layer is arranged on the front face of the N-type silicon wafer. An upper metallization electrode and an interconnection metal layer are arranged on the upper surface of the oxidation layer. An N+ doped region and a lower metallization electrode are sequentially arranged on the back face of the N-type silicon wafer. Two inverted triodes are arranged inside the one-way low-voltage TVS device, the one-way TVS device with the low breakdown voltage and low electric leakage can be manufactured by setting the reasonable magnification times by means of the triode collector-emitter breakdown principle, the problem that high electric leakage is caused by Zener breakdown during low breakdown voltage is avoided, a manufacturing method is simple and easy to implement, and the one-way low-voltage TVS device meets the requirement for batch production.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and in particular relates to a unidirectional low-voltage TVS device and a manufacturing method thereof. Background technique [0002] The damage to electronic circuits caused by transient interference such as lightning and unpredictable surge currents has become one of the main mode causes of electrical equipment. Therefore, protective devices must be equipped in the circuit to protect fragile and sensitive ICs and precision electronic components. . [0003] Transient Voltage Suppressor (TVS), as an effective protection device, effectively suppresses transient interference. TVS is a special function diode made of silicon semiconductor material. When the two ends of the TVS tube are subjected to an instantaneous high-energy impact, it can quickly turn on, absorb the surge current, and clamp the voltage between its two ends at a predetermined value. In terms of value, it can ...

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Problems solved by technology

However, for low-voltage TVS with a working voltage of less than 6V, since the proportion of Zener breakdown in the PN junction breakdown increases at this time, the leakage of the device will increase exponentially, usually tens to hundreds of microamperes, which will reduce the electrical equipment. reliability, causing malfunction and waste of energy

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