TFT array substrate and making method thereof

Abstract

The invention discloses a TFT array substrate and a making method thereof. A two-dimensional layer type semiconductor material with a similar graphene structure is formed on the substrate, and the two-dimensional layer type semiconductor material with the similar graphene structure is transferred to the designated location of a flexible substrate in a transferring mode so as to serve as a semiconductor active layer of the array substrate. Therefore, the semiconductor active layer of the TFT array substrate adopts the two-dimensional layer type semiconductor material with the similar graphene structure, the array substrate has very high migration rate and mechanical property, flexing resistance is excellent, and the thickness of the substrate is greatly reduced.

Description

technical field [0001] The invention relates to the field of flat panel display technology, in particular to a TFT array substrate and a manufacturing method thereof. Background technique [0002] In the existing flat panel display technology, the TFT (thinfilm transistor, thin film transistor) used for driving uses amorphous silicon (a-Si for short), low temperature polysilicon (LTPS for short) or amorphous IGZO as the semiconductor active layer. . The electron mobility of a-SiTFT is lower than 1cm 2 / V -1 the s -1 , which limits the display area and logic control speed. Although LTPS has a high electron mobility, it has a large leakage current, which will affect the touch accuracy and touch operation experience. Amorphous IGZO (Indium Gallium Zinc Oxide, Indium Gallium Zinc Oxide) has a small leakage current, but it is very sensitive to water, oxygen and light, which will affect the service life. More importantly, when the amorphous and polycrystalline semiconductor ...

AI Technical Summary

Problems solved by technology

The electron mobility of a-SiTFT is lower than 1cm 2 / V -1 the s -1 , which limits the display area and logic control speed

Although LTPS has a high electron mobility, it has a large leakage current, which will affect the touch accuracy and touch operation experience

Amorphous IGZO (Indium Gallium Zinc Oxide, Indium Gallium Zinc Oxide) has a small leakage current, but it is very sensitive to water, oxygen and light, which will affect the service life

More importantly, when the amorphous and polycrystalline semiconductor materials in the above technologies are used for flexible display substrates, they are prone to cracks after repeated bending and folding, which in turn will cause spots, black lines and cracks on the display screen. bright line etc.

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