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Mems piezoelectric vector hydrophone with series structure and preparation method thereof

A technology of vector hydrophone and series structure, which is applied in the field of sensing, can solve the problems of low sensitivity, poor temperature stability, and easy adhesion of devices, etc., and achieve the effect of improved sensitivity and simple preparation process

Active Publication Date: 2019-08-27
INST OF ACOUSTICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the piezoresistive type has a relatively mature preparation process, its sensitivity is low, and because of Joule heat, it has large thermal noise and poor temperature stability.
Although the capacitive type has high sensitivity, due to the existence of tiny air gaps, it is easy to cause adhesion during preparation and use, which will cause the device to fail, and a bias voltage is required during use.

Method used

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  • Mems piezoelectric vector hydrophone with series structure and preparation method thereof
  • Mems piezoelectric vector hydrophone with series structure and preparation method thereof
  • Mems piezoelectric vector hydrophone with series structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] 1) Clean the substrate

[0041] Clean the SOI silicon wafer with a standard cleaning method, first use acidic cleaning solution and alkaline cleaning solution to boil and clean, then clean with deionized water, and finally blow dry with nitrogen. figure 2 It is a cross-sectional view of the substrate SOI silicon wafer of the chip, such as figure 2 As shown, the SOI silicon wafer includes: SOI base layer 3 , SOI oxide layer 2 and SOI silicon layer 1 . The SOI base layer 3 has a thickness of 500 μm, the SOI oxide layer 2 has a thickness of 0.05 μm, and the SOI silicon layer 1 has a thickness of 10 μm.

[0042]2) deposit insulating oxide layer 4

[0043] The insulating oxide layer 4 is formed on the surface of the substrate by thermal oxidation furnace, and the profile of the chip after the insulating oxide layer is deposited on the front side is as follows: image 3 As shown, wherein, after depositing an insulating oxide layer 4 with a thickness of 1 μm, the front si...

Embodiment 2

[0070] 1) Clean the substrate

[0071] Clean the SOI silicon wafer with a standard cleaning method, first use acidic cleaning solution and alkaline cleaning solution to boil and clean, then clean with deionized water, and finally blow dry with nitrogen. The SOI silicon wafer includes: the thickness of the SOI base layer 3 is 300 μm, the thickness of the SOI oxide layer 2 is 0.5 μm, and the thickness of the SOI silicon layer 1 is 1 μm, such as figure 2 shown.

[0072] 2) deposit insulating oxide layer 4

[0073] Utilize thermal oxidation furnace to form insulating oxide layer 4 on substrate surface oxidation, as image 3 As shown, the thickness is 20 μm, the front side is protected by photoresist immediately, and the silicon dioxide on the back side is etched with a slow-release hydrofluoric acid (BHF) solution to remove the photoresist.

[0074] 3) Etching mask for back deposit

[0075] A 0.01 μm silicon nitride film 5 is deposited on the back of the silicon wafer by plas...

Embodiment 3

[0093] 1) Clean the substrate

[0094] Clean the SOI silicon wafer with a standard cleaning method, first use acidic cleaning solution and alkaline cleaning solution to boil and clean, then clean with deionized water, and finally blow dry with nitrogen. The SOI silicon wafer includes: the thickness of the SOI base layer 3 is 400 μm, the thickness of the SOI oxide layer 2 is 1 μm, and the thickness of the SOI silicon layer 1 is 0.5 μm, such as figure 2 shown.

[0095] 2) deposit insulating oxide layer 4

[0096] Utilize thermal oxidation furnace to form insulating oxide layer 4 on substrate surface oxidation, as image 3 As shown, the thickness is 10 μm, the front side is protected by photoresist immediately, and the back side silicon dioxide is etched with a slow-release hydrofluoric acid (BHF) solution to remove the photoresist.

[0097] 3) Etching mask for back deposit

[0098] A 1 μm silicon oxide film 5 is deposited on the back of the silicon wafer by plasma enhanced ...

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PUM

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Abstract

The invention relates to an MEMS piezoelectric vector hydrophone with a serial structure. The MEMS piezoelectric vector hydrophone comprises one to three sensing units and an embedding structure. The one to three sensing units are mutually vertically placed on the embedding structure. Each sensing unit comprises at least two piezoelectric sensing chips, an insulation plate and a rear amplification circuit, wherein the at least two piezoelectric sensing chips are serially welded and adhered to the insulation plate, and the insulation plate is adhered to and electrically connected to the rear amplification circuit. Each piezoelectric sensing chip comprises a mass block, a piezoelectric unit and a composite elastic beam. In case of an inertia force effect, the composite elastic beams are deformed to enable the piezoelectric units connected with the composite elastic beams to generate charge. According to the invention, the MEMS piezoelectric vector hydrophone is prepared by use of a piezoelectric sensing chip serial structure, the sensitivity is obviously improved, and the preparation process is simple.

Description

technical field [0001] The invention relates to the field of sensing technology, in particular to a MEMS piezoelectric vector hydrophone with a serial structure and a preparation method thereof. Background technique [0002] Compared with the traditional vector hydrophone, the micro-vector hydrophone is small in size, can reduce the impact on the original radiation sound field, make the detection result more accurate, and has low manufacturing cost, and it is easy to realize low-frequency detection. The current micro-vector hydrophones are capacitive and piezoresistive. Although the piezoresistive type has relatively mature preparation technology, its sensitivity is low, and because of Joule heat, it has large thermal noise and poor temperature stability. Although the capacitive type has high sensitivity, due to the existence of tiny air gaps, it is easy to cause adhesion during preparation and use, which will cause the device to fail, and a bias voltage is required during ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01H11/08
Inventor 汪承灏李俊红魏建辉马军任伟
Owner INST OF ACOUSTICS CHINESE ACAD OF SCI
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