Electro-optical detector capable of calibrating voltage

A technology for calibrating voltages and detectors, used in electronic circuit testing, measuring current/voltage, instruments, etc., and can solve problems such as non-uniformity
CN100439931CInactive Publication Date: 2008-12-03JILIN UNIV

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
JILIN UNIV
Publication Date
2008-12-03
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses an electrooptical detector of voltage calibration in the integrated circuit measuring device, which comprises the following parts: laser device 8, microscope lens 13, electrooptical probe 14, luminous light source 15, filter lens 16 and photoelectric detector 26, wherein the electrooptical probe 14 is composed of transparent base plate 1, antireflecting film 2 on the upper surface, earth conductive film 3 on the lower surface and electrooptical dielectric layer 4 under the earth conductive film 3; the polar direction of electrooptical dielectric layer 4 and beam transmission parallels the normal direction of earth conductive film 3; the electrooptical signal of electrooptical probe can calibrate the voltage signal amplitude in the corresponding circuit, which reinforces the electrooptical detecting technique appliance of specialty detection and circuit fault diagnosis; the electrooptical probe possesses higher voltage sensibility and higher spatial distinguishability of electric field distribution, which prevents the circuit working condition from observable interference and adjacent signal line from electrooptical serial signal.
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Description

technical field

[0001] The invention belongs to a device for integrated circuit detection, in particular to a detector for nondestructively detecting voltage signals in microstrip transmission lines in integrated circuits by using electro-optical effects. Background technique

[0002] In order to increase the integration and operating speed of integrated circuits, efforts are being made to reduce the size of devices in integrated circuit chips. In the development process of this high-speed large-scale integrated circuit, problems such as leakage, thermal effects, parasitic parameter effects in circuit chips, and uncertainty of device model parameters have become obstacles to further improving the yield and reliability of device chips. As we all know, it is impossible for a device with a low yield rate to improve its reliability through a simple screening process; a highly reliable device is manufactured with a highly reliable design and a highly reliable process. Therefore,...

Claims

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