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Subatmospheric pressure non-doped silica glass film formation method

A technology of non-doped silica glass and film forming method, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of not being able to adapt to mass production and poor process particle system, and achieve controllable film thickness and good particle size , the effect of good shape retention

Active Publication Date: 2018-10-26
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The liner oxide film is required to have perfect step coverage, good shape retention, good in-plane uniformity, and no plasma damage. The machines that meet this requirement include LPCVD (TEOS) (LPCVD (: low-pressure chemical vapor deposition ) (TEOS: Tetraethyl silicate) and SAT TEOS, and each of them has a disadvantage: it cannot be adapted to mass production
However, although there is no overhang at SAT 550°C, the particle system of this process is not good, and the number of particles is 2000, which cannot be solved. figure 2 shown

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  • Subatmospheric pressure non-doped silica glass film formation method
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Embodiment Construction

[0013] The sub-atmospheric pressure non-doped silica glass film-forming method described in the present invention adopts the temperature of the reaction chamber at 400°C, the atmosphere of oxygen and helium, and through gradual pressure control, there are 4 steps before film formation to form a pressure gradient. The TEOS pressure reaches 600 Torr, which is close to atmospheric pressure. At the same time, it prevents air flow disturbance from causing particle problems.

[0014] The progressive pressure control described above is carried out step by step in the reaction chamber under the condition of oxygen and helium at 400°C:

[0015] The first step is to control the TEOS throttle valve to be in a half-open state; the second step is to stop when the pressure in the reaction chamber slowly rises to 200Torr; the third step is to stop when the pressure in the reaction chamber rises slowly to 400Torr; In the fourth step, when the pressure in the reaction chamber rises slowly to ...

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Abstract

The invention discloses an undoped silica glass film forming method under secondary normal pressure. Through progressive pressure control, the internal pressure of a reaction cavity during film forming reaches 600Torr, and meanwhile, the problem of particle generation due to air disturbance is prevented by controlling the flow quantity of a reactive gas. The formed oxide film has the advantages of favorable conformality and good particles and is suitable for mass production, and the thickness of the film is controllable.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for forming a subatmospheric pressure (SAT) non-doped silicon glass film. Background technique [0002] The trench liner layer of power MOS devices is an oxide film used to isolate the silicon substrate and polysilicon. This oxide film needs to cover a trench with a large aspect ratio (5:1), and the subsequent polysilicon fill in. The liner oxide film is required to have perfect step coverage, good shape retention, good in-plane uniformity, and no plasma damage. The machines that meet this requirement include LPCVD (TEOS) (LPCVD (: low-pressure chemical vapor deposition ) (TEOS: tetraethyl orthosilicate) and SAT TEOS, and they all have their own disadvantage: they cannot be adapted to mass production. As shown in the following table: [0003] [0004] The use of SAT 400°C or LPCVD process will cause the pad oxide film to overhang, such a...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/28
CPCH01L21/28158H01L29/66477
Inventor 严玮刘立成周俊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP