Unlock instant, AI-driven research and patent intelligence for your innovation.

synchronous dynamic random access memory

A random access memory, synchronous dynamic technology, applied in the field of memory, can solve problems such as system hang, affect system stability, not start, etc., to achieve the effect of improving compatibility, improving signal integrity, and improving system stability

Active Publication Date: 2018-04-27
DMS CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Due to differences in PCB technology in actual printed circuit board (PCB) design, differences in PCB parameters of different boards, differences in PCB design stackup, and differences between chips, it is difficult to adapt to the existing few fixed ODT termination resistors. Due to the discrete factors of impedance in the above-mentioned situations, there are differences in the impedance of different data lines in the PCB and the same data line in different PCBs. The data buses of different data bits have different signal reflections and different signal delays, which are prone to system failure. Unscheduled hangs or even does not start, affecting the stability of the system

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • synchronous dynamic random access memory
  • synchronous dynamic random access memory
  • synchronous dynamic random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0060] The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other under the condition of no conflict.

[0061] It should be noted that the drawings provided in the following embodiments are only used to illustrate the basic concept of the present invention in a schematic way, so the drawings only show the components related to the present invention rather than the number, shape and number of compo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a synchronous dynamic random access memory. The synchronous dynamic random access memory comprises a resistor module, a mode register, a decoder and at least one logic control module, wherein the resistor module is arranged on a signal wire in the synchronous dynamic random access memory and comprises an adjustable first terminating resistor; the mode register is used for controlling the operation mode of the synchronous dynamic random access memory; the decoder is used for acquiring a configuration signaling of the mode register according to a received control signal; the logic control module is used for decoding according to the received control signal of the terminating resistor and regulating the size of a first terminating resistance according to the configuration signaling. According to the synchronous dynamic random access memory, the integrity of data signals in a dynamic random access memory of an embedded system and the stability of the system are improved.

Description

technical field [0001] The invention relates to the field of memory, in particular to a synchronous dynamic random access memory. Background technique [0002] Synchronous Dynamic Random Access Memory (Synchronous Dynamic Random Access Memory, SDRAM) is used as the cache of the microprocessor, the working speed is synchronized with the speed of the system bus, and the data retention time in the cache space is short. Dynamic random access memory (Dynamic Random Access Memory, DRAM) can be divided into SDRAM, double rate synchronous dynamic random access memory (Double Data Rate SDRAM, DDRSDRAM), DDR2 SDRAM, DDR3 SDRAM, etc. DDR2 SDRAM is the second generation of double data rate synchronous dynamic random access memory. Compared with DDR SDRAM, it has higher operating efficiency, lower voltage and lower power consumption. Under the same core frequency of the system controller, the timing operating frequency of DDR2 It is twice that of DDR and is based on the development of D...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/409G11C11/408
CPCG11C11/408G11C11/409
Inventor 文君
Owner DMS CORP