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Formation method for mask pattern, thin film transistor and formation method, and display apparatus

A thin film transistor and mask pattern technology, which is applied in the display field and can solve the problems of complex halftone mask manufacturing process and the like

Inactive Publication Date: 2016-05-11
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, half-tone masks are used to form the above mask patterns, and the manufacturing process of half-tone masks is more complicated.

Method used

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  • Formation method for mask pattern, thin film transistor and formation method, and display apparatus
  • Formation method for mask pattern, thin film transistor and formation method, and display apparatus
  • Formation method for mask pattern, thin film transistor and formation method, and display apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0082] An embodiment of the present invention provides a method for forming a mask pattern, referring to figure 2 As shown, the method includes:

[0083] S01. Reference image 3 As shown, a negative photoresist 11 is formed on the substrate 10, and the negative photoresist 11 has the following characteristics: after exposure in an oxygen-free environment, the exposed part can be cured; after exposure in an oxygen environment , the surface of the exposed part cannot be cured, and other exposed parts except the surface can be cured.

[0084] The above-mentioned negative photoresist is a special photoresist. After exposure in an oxygen-free environment, the exposed part can be cured; after exposure in an oxygen environment, the surface of the exposed part cannot be cured. Other exposed parts can be cured. Illustratively, the negative photoresist can be directly obtained by removing nano-silver on the surface of TCTF (Nano silver transparent conductive film) produced by Hitach...

Embodiment 2

[0116] An embodiment of the present invention provides a method for forming a thin film transistor, referring to Figure 14 As shown, the method includes:

[0117] S141. Reference Figure 15 As shown, a metal oxide layer 15 and an etch stop layer 16 are sequentially formed on a substrate 10 .

[0118] The material of the above-mentioned metal oxide layer may be indium gallium zinc oxide, indium tin zinc oxide, zinc indium tin oxide or magnesium indium zinc oxide, etc., which is not specifically limited here. The material of the etching stopper layer may be silicon nitride, silicon oxide or silicon oxynitride. The embodiments of the present invention do not limit the thicknesses of the metal oxide layer and the etching stopper layer, which are determined according to actual conditions.

[0119] The embodiment of the present invention does not limit the specific method for forming the metal oxide layer and the etching barrier layer. For example, the metal oxide layer and the ...

Embodiment 3

[0132] An embodiment of the present invention provides a method for forming a thin film transistor, referring to Figure 21 As shown, the method includes:

[0133] S211. Reference Figure 22 As shown, a polysilicon layer 17 is formed on a substrate 10 .

[0134] The embodiment of the present invention does not limit the method for forming the polysilicon layer. As an example, an amorphous silicon layer may be formed on the substrate, and then the amorphous silicon layer may be treated by an excimer laser annealing method, so that the amorphous silicon layer is converted into a polysilicon layer.

[0135] S212. Reference Figure 23 As shown, the mask pattern 1 is formed on the polysilicon layer 17 using any one of the methods provided in Embodiment 1, wherein the mask pattern 1 includes a body portion 102 and a step portion 101 located around the body portion 102, and the body portion 102 The thickness of is greater than the thickness of the stepped portion 101 .

[0136] ...

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Abstract

The invention provides a formation method for a mask pattern, a thin film transistor and a formation method, and a display apparatus, and relates to the field of a display technology. According to the formation method for the mask plate, a mask pattern with different thicknesses can be formed by adopting a common mask plate, so that a halftone mask plate is avoided. The formation method for the mask plate comprises the steps of forming negative photoresist on a substrate; performing exposure on the negative photoresist for the first time by a first common mask plate in an oxygen-free environment to enable a fully-cured part of the negative photoresist to be exposed, and to enable a half-cured part and a removal part of the negative photoresist not to be exposed; performing exposure on the negative photoresist for the second time by a second common mask plate in an aerobic environment to enable the half-cured part of the negative photoresist to be exposed, and to enable the removal part of the negative photoresist not to be exposed; and removing the non-cured negative photoresist to form the mask pattern. The formation method is suitable for manufacturing the mask pattern.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for forming a mask pattern, a thin film transistor and the method for forming it, and a display device. Background technique [0002] Currently, film layers in display devices are mostly formed by a patterning process. The patterning process is a process of forming a thin film into a layer including at least one pattern. The patterning process generally includes: forming a mask pattern on the film, then etching away the film portion not covered by the mask pattern, and finally peeling off the remaining mask pattern to obtain the desired film pattern. [0003] In practical applications, it is often necessary to form a thin film pattern with steps. At this time, it is necessary to form figure 1 Mask pattern 1 with steps is shown. At present, half-tone masks are used to form the above-mentioned mask patterns, but the manufacturing process of the half-tone masks is relat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027H01L21/336H01L27/12
CPCH01L21/0271H01L27/1214H01L29/66742H01L21/027G03F7/094G03F7/201G03F7/203H01L29/66757H01L29/66969H01L27/1288H01L29/7869G03F7/40H01L29/78621H01L21/0274G03F7/2022G03F7/2026H01L27/12G03F7/16G03F7/20H01L29/6675
Inventor 张斌周婷婷刘震曹占锋舒适姚琪关峰
Owner BOE TECH GRP CO LTD