Cover plate and carrying device

Abstract

The invention provides a cover plate and a carrying device. The cover plate is used for fixing a plurality of substrates on a tray, and the surface of the cover plate is provided with a plurality of through holes penetrating the thickness of the cover plate. The through holes are corresponding to carrying positions of the tray used for carrying the substrates, and the cover plate is made of materials capable of consuming the free radical carrying out the reaction with the mask in the plasma. The upper surface of the cover plate comprises a plurality of reaction areas, each of which is correspondingly disposed on the annular area on the periphery of each through hole, and the size of the area of each of the reaction areas is in the positive correlation with the etching selection ratio of the corresponding through hole position. The cover plate provided by the invention is advantageous in that the inter-chip etching uniformity of the single processing can be improved, and therefore the yield of the single processing can be improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronic processing, and in particular relates to a cover plate and a carrying device. Background technique [0002] Patterned Sapphire Substrate (Patterned Sapphire Substrate, hereinafter referred to as PSS) is currently the mainstream substrate for improving the light output efficiency of LED devices. Dry etching technology is usually used to etch the sapphire substrate with mask pattern to obtain the image. sapphire substrate. During the PSS etching process, in order to increase the throughput of a single process, it is usually used to place multiple substrates on the tray and then transfer them to the base in the reaction chamber, and stack them on the substrate through the cover plate in the reaction chamber. On the tray, multiple substrates are fixed between the tray and the cover, so that multiple substrates can be etched simultaneously. [0003] figure 1 A top view of the existing cover ...

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Problems solved by technology

[0004] However, the use of the above-mentioned cover plate 10 will inevitably have the following problems in practical applications: the etching selectivity ratios at the positions of the through holes 101 in the central area, the inner ring area and the outer ring area of ​​the cover plate are different and gradually decrease. , where the etching selectivity is equal to the ratio of the PSS etching rate of the substrate to the etching rate of the photoresist mask (PR), if the etching selectivity is high, the etching depth of the substrate at the position of the through hole If the etching selectivity ratio is low, the etching depth of the substrate at the position of the through hole will be low, and the poor etching morphology and low etching depth of the substrate will affect the The light extraction efficiency of PSS, therefore, the use of the existing cover plate will cause poor etching uniformity, resulting in low yield rate of a single process

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