Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

MEMS (Micro Electro Mechanical System) microphone, preparation method thereof and electronic device

A microphone and backplane technology, applied in the field of MEMS microphones and their preparation, can solve the problems of low stiffness coefficient, poor frequency response performance of microphones, difficulty in preparing sensitive microphones, etc., and achieve the effects of improving sensitivity and reducing nonlinear errors.

Inactive Publication Date: 2016-05-11
SEMICON MFG INT (SHANGHAI) CORP
View PDF3 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the low stiffness coefficient of the diaphragm (diaphragm) will lead to poor frequency response performance of the microphone
[0006] Therefore, it is difficult to prepare a microphone with high sensitivity and unaffected frequency response

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MEMS (Micro Electro Mechanical System) microphone, preparation method thereof and electronic device
  • MEMS (Micro Electro Mechanical System) microphone, preparation method thereof and electronic device
  • MEMS (Micro Electro Mechanical System) microphone, preparation method thereof and electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] In order to solve the problems in the prior art, a MEMS microphone is provided, and the MEMS device will be further described below in conjunction with the accompanying drawings, wherein the Figure 1m It is a structural schematic diagram of the MEMS device.

[0065] The MEMS microphone of the present invention comprises:

[0066] semiconductor substrate 101;

[0067] The first backplane 103 is located on the semiconductor substrate 101;

[0068] The diaphragm 105 is located on the first backplane;

[0069] The second backplane 107 is located on the diaphragm 105;

[0070] Wherein, a first cavity is formed between the first backplane 103 and the diaphragm, and a second cavity is formed between the second backplane and the diaphragm;

[0071] A back cavity is formed in the semiconductor substrate below the first cavity.

[0072] Wherein, the semiconductor substrate 101 may be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon...

Embodiment 2

[0094] In order to solve the problems existing in the prior art, a method for preparing a MEMS microphone is provided, and the method for preparing the MEMS microphone will be further described below in conjunction with the accompanying drawings, wherein the Figure 1a-1m It is a structural schematic diagram of the MEMS microphone.

[0095] First, step 201 is performed to provide a semiconductor substrate 101 on which an insulating layer 102 and a first backplane 103 are formed.

[0096] Specifically, such as Figure 1a As shown, in this step, the semiconductor substrate may be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc.

[0097] The insulating layer 102 can be selected from SiN, but is not limited to the material.

[0098] The first backplane can be polysilicon or SiGe.

[0099] Step ...

Embodiment 3

[0149] The present invention also provides an electronic device, including the MEMS microphone described in Embodiment 1. Wherein, the semiconductor device is the MEMS microphone described in Embodiment 1, or the MEMS microphone obtained according to the preparation method described in Embodiment 2.

[0150] The electronic device of this embodiment can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV set, VCD, DVD, navigator, camera, video recorder, voice recorder, MP3, MP4, PSP, etc. , can also be any intermediate product including the MEMS device. The electronic device of the embodiment of the present invention has better performance due to the use of the above-mentioned MEMS device.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an MEMS microphone, a preparation method thereof and an electronic device. The MEMS microphone comprises a semiconductor substrate, a first backboard over the semiconductor substrate, a diaphragm over the first backboard and a second backboard over the diaphragm; a first cavity is formed between the first backboard and the diaphragm, and a second cavity is formed between the second backboard and the diaphragm; and a back cavity of the first backboard is exposed out of the semiconductor substrate. According to the differential capacitive microphone of the invention, the flexibility of the microphone is doubled while the frequency response of the diaphragm is not changed, and non-linear errors are greatly reduced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular, the invention relates to a MEMS microphone, a preparation method thereof, and an electronic device. Background technique [0002] With the continuous development of semiconductor technology, smart phones, integrated CMOS and micro-electromechanical systems (MEMS) devices have increasingly become the most mainstream and advanced technologies in the market for sensor products, and with technology updates, and Towards small size, high performance and low power consumption. [0003] Among them, MEMS sensors are widely used in automotive electronics: such as TPMS, engine oil pressure sensor, air pressure sensor of automobile brake system, automobile engine intake manifold pressure sensor (TMAP), common rail pressure sensor of diesel engine; consumer electronics: such as tire pressure gauge , sphygmomanometer, cabinet scale, health scale, pressure sensor for washing machine, dishwasher, re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H04R19/04H04R31/00
Inventor 何昭文
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com