Fin field effect transistor and method of forming the same
A fin field effect and transistor technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as the inability to meet the requirements of device performance, reduce interactions, improve performance, improve quality and The effect of carrier mobility
Active Publication Date: 2018-09-07
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
However, when the feature size of the device is further reduced, even if the gate-last process is adopted, the structure of the conventional MOS field effect transistor can no longer meet the requirements for device performance, and the fin field effect transistor (Fin FET) is obtained as a multi-gate device. received widespread attention
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[0030] As mentioned in the background art, the performance of existing fin field effect transistors formed by using graphene as a channel material needs to be further improved.
[0031] The quality of the graphene layer currently formed on the fin is poor, the atomic disorder on the surface of the graphene layer is high, and there are many defects in the graphene layer, resulting in the mobility of the charge carriers in the graphene layer. Decrease, thereby affecting the performance of the formed fin field effect transistor.
[0032] Research has found that when a graphene layer is formed on the surface of the carbon-containing semiconductor layer on the surface of the fin as the channel region of the fin field effect transistor, the formation quality of the graphene layer is related to the structure of the carbon-containing semiconductor layer. The included angle between the fin sidewall and the semiconductor substrate is relatively large, close to vertical, the surface free...
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The invention relates to a fin type field-effect transistor and a formation method thereof. The formation method of a fin type field-effect transistor comprises: a semiconductor substrate is provided; a fin is formed on the semiconductor substrate and a first inclination angle is formed between the side wall of the fin and the surface of the semiconductor substrate; an isolation layer is formed on the semiconductor substrate surface, and the part, higher than the isolation layer, of the fin is used as a first partial fin and the part, covered by the isolation layer, of the fin is used as a second partial fin; the side wall of the first partial fin is etched and thus a second inclination angle is formed between the side wall of the first partial fin and the semiconductor substrate surface, wherein the second inclination angle is smaller than the first inclination angle; a carbon-contained semiconductor layer is formed on the surface of the side wall of the first partial fin; a graphene layer is formed on the surface of the carbon-contained semiconductor layer; and a gate structure crossing the fin is formed on the surface of the isolation layer, wherein the gate structure covers the part of the graphene layer at the side wall of the first partial fin and the part of the fin top. With the method, the performances of the fin type field-effect transistor can be improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a fin field effect transistor and a forming method thereof. Background technique [0002] With the continuous development of semiconductor process technology, process nodes are gradually reduced, and gate-last (gate-last) process has been widely used to obtain an ideal threshold voltage and improve device performance. However, when the feature size of the device is further reduced, even if the gate-last process is adopted, the structure of the conventional MOS field effect transistor can no longer meet the requirements for device performance, and the fin field effect transistor (Fin FET) is obtained as a multi-gate device. received widespread attention. [0003] At the same time, with the continuous reduction of the device size in the field of integrated circuits, the silicon material is gradually approaching its processing limit. The semiconductor industry has proposed ...
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IPC IPC(8): H01L21/336H01L29/78
Inventor 张海洋郑喆
Owner SEMICON MFG INT (SHANGHAI) CORP