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Method for improving copper film thickness consistency during alkaline CMP of GLSI silicon through holes

A technology of copper film thickness and consistency, which is applied to polishing compositions containing abrasives, grinding devices, grinding machine tools, etc., can solve the unmentioned problems of copper film thickness consistency, reduce damaged layers, facilitate removal, The effect of improving uniformity

Inactive Publication Date: 2016-05-25
TIANJIN JINGLING MICROELECTRONIC MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the consistency of the copper film thickness during the polishing process is not mentioned

Method used

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  • Method for improving copper film thickness consistency during alkaline CMP of GLSI silicon through holes
  • Method for improving copper film thickness consistency during alkaline CMP of GLSI silicon through holes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Prepare 2kgFA / O polishing solution for chemical mechanical polishing.

[0029] Take 1000g of silica hydrosol with a particle size of 80nm, add 50gFA / OⅡtype chelating agent while stirring, then add 15gFA / OⅠtype surfactant while stirring, then add it into 927.5g of deionized water while stirring, and finally Add 7.5g of hydrogen peroxide while stirring; wipe the polishing piece with absolute alcohol, rinse off the residual alcohol with water, and load the polishing piece on the polishing machine table. Working pressure: 27.4kpa; polishing head / disc speed: 65 / 60rpm; flow rate: 225mL / min, polishing time: 180s. After polishing, take out the polishing sheet, first rinse it with water, then dry the water with nitrogen, put the polishing sheet in a dust-free box and send it to the testing room. The results are: the copper film removal rate is 1.94μm / min; the non-uniformity within the chip is 2.9%.

Embodiment 2

[0031] Prepare 2kgFA / O polishing solution for chemical mechanical polishing.

[0032] Take 1000g of silica hydrosol with a particle size of 80nm, add 50gFA / OⅡtype chelating agent while stirring, then add 15gFA / OⅠtype surfactant while stirring, then add it into 927.5g of deionized water while stirring, and finally Add 7.5g of hydrogen peroxide while stirring; wipe the polishing piece with absolute alcohol, rinse off the residual alcohol with water, and load the polishing piece on the polishing machine table. Working pressure: 27.4kpa; polishing head / disk speed: 85 / 80rpm; flow rate: 225mL / min, polishing time: 180s. After polishing, take out the polishing sheet, first rinse it with water, then dry the water with nitrogen, put the polishing sheet in a dust-free box and send it to the testing room. The results are: the copper film removal rate is 1.92μm / min; the non-uniformity within the chip is 3.2%.

Embodiment 3

[0034] Prepare 2kgFA / O polishing solution for chemical mechanical polishing.

[0035]Take 1000g of silica hydrosol with a particle size of 80nm, add 50gFA / OⅡtype chelating agent while stirring, then add 15gFA / OⅠtype surfactant while stirring, then add it into 927.5g of deionized water while stirring, and finally Add 7.5g of hydrogen peroxide while stirring; wipe the polishing piece with absolute alcohol, rinse off the residual alcohol with water, and load the polishing piece on the polishing machine table. Working pressure: 27.4kpa; polishing head / disk speed: 105 / 100rpm; flow rate: 225mL / min, polishing time: 180s. After polishing, take out the polishing sheet, first rinse it with water, then dry the water with nitrogen, put the polishing sheet in a dust-free box and send it to the testing room. The results are: the copper film removal rate is 1.91μm / min; the non-uniformity within the chip is 3.7%.

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Abstract

The invention relates to a method for improving the copper film thickness consistency during alkaline CMP of GLSI silicon through holes. The method comprises the specific steps that the initial copper film thickness of a polished chip is measured, and a polishing pad is selected; the flow rate of FA / O polishing liquid is adjusted to 150-300 ml / min, the working pressure of a polishing machine is adjusted to 12-40 kPa, the rotating speed of a polishing head is adjusted to 30-120 rpm, the rotating speed of a polishing disk is adjusted to 30-120 rpm, the polishing time is adjusted to 60-300 seconds, and polishing begins; the polished chip is taken out and cleaned thoroughly after the polishing is completed, multiple test points are selected to measure the residual copper film thickness after the polishing, and the polishing rate is converted based on the difference of the copper film thicknesses before and after the polishing. The method has the advantages that the surface mass transfer and temperature uniformity of the polished chip are improved under the synergistic effect of an FA / O surfactant and the rotating speed of the polishing head / polishing disk, accordingly the copper film consistency is controlled, and non-consistency within the chip can be reduced to be below 3%.

Description

technical field [0001] The invention belongs to the field of chemical mechanical polishing, in particular to a method for improving the consistency of copper film thickness in alkaline CMP of GLSI through-silicon holes. Background technique [0002] With the development of integrated circuits, the integration of chips is getting higher and higher, and some challenges in chip interconnection technology have also followed. Moore's law has reached its limit in traditional two-dimensional packaging, so new routes need to be developed. Three-dimensional IC integration technology is sweeping the semiconductor industry, and through-silicon via (TSV) technology is the most important core technology for 3D silicon integration and 3DIC integration. Its advantages include reducing interconnection delay, increasing bandwidth, reducing power consumption and reducing cost. It is the latest technology to realize interconnection between chips by making vertical conduction between chips and ...

Claims

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Application Information

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IPC IPC(8): B24B37/04C09G1/02
CPCB24B37/044B24B37/042C09G1/02
Inventor 刘玉岭刘俊杰檀柏梅
Owner TIANJIN JINGLING MICROELECTRONIC MATERIALS CO LTD
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