MWT and passivation combined crystal silicon solar cell and manufacturing method thereof

A technology of solar cells and manufacturing methods, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as low-cost mass-producible structures and preparation methods that have not yet appeared, and achieve the effect of being beneficial to removal

Inactive Publication Date: 2014-02-19
ALTUSVIA ENERGY TAICANG
View PDF8 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Although many companies and research institutes at home and abroad are currently developing point-contact solar cells and MWT ce

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MWT and passivation combined crystal silicon solar cell and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0033] Example: The structure of the crystalline silicon solar cell combined with MWT and back passivation in this example is as follows: figure 1 As shown, the structure includes an antireflection film 1, a phosphorus diffusion layer 2, a P-type silicon substrate 3, an aluminum oxide film 4, a laminated protective film 5, and an aluminum printing layer 6 that are stacked in sequence. The hole-filled silver electrode 7 is installed, the hole wall and the hole-filled silver electrode 7 are covered with a dielectric film, the top of the hole-filled silver electrode 7 is covered with a front silver electrode 8, and the aluminum printing layer 6 has spaced protrusions, the protrusions A localized aluminum back field contact 9 is formed through the laminated protective film 5 and the aluminum oxide film 4 and with the P-type silicon substrate 3 .

[0034] Taking 156mm P-type single crystal silicon wafer as the base material, the specific steps of the manufacturing method are as fol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Square resistanceaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an MWT and passivation combined crystal silicon solar cell and a manufacturing method thereof. The crystal silicon solar cell comprises a passivating film, a phosphorus diffusion layer, a P-type silicon substrate, an aluminum oxide film, a laminated protective film and an aluminum printing layer structure which are sequentially superposed, and a through-hole silver electrode penetrates the crystal silicon solar cell. The manufacturing method of the crystal silicon solar cell comprises the steps of drilling, flocking, diffusing, polishing, film growth, tapping, hole filling, printing, sintering and the like. The MWT and passivation combined crystal silicon solar cell has the advantages of being low in cost and capable of being produced in a mass mode.

Description

technical field [0001] The invention relates to a structure and a manufacturing method of a solar cell, in particular to a crystalline silicon solar cell combined with MWT and back passivation and a manufacturing method thereof. Background technique [0002] The industrial production of modern solar cells is developing towards high efficiency and low cost. The combination of MWT (Metal wrap through) technology and rear passivation (PERC) technology, as a representative of the development direction of high efficiency and low cost, has the following advantages: [0003] (1) Very low front shading: MWT technology leads the busbar to the back of the battery by drilling holes in the silicon wafer, thereby reducing the shading of the metal electrodes on the sun-facing side of the battery; [0004] (2) Excellent back reflector: Due to the existence of the dielectric film on the back of the battery, the internal back reflection increases from 65% of the conventional all-aluminum bac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/0216H01L31/0224H01L31/18
CPCH01L31/02167H01L31/02245H01L31/02327H01L31/068H01L31/1804H01L31/1876Y02E10/547Y02P70/50
Inventor 夏正月高艳涛陈同银刘仁中董经兵张斌邢国强
Owner ALTUSVIA ENERGY TAICANG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products