Three-dimensional multi-trench gate enhanced HEMT device and preparation method thereof
An enhanced, slot-gate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as low effective utilization, low current density, and damage to the continuity of the AlGaN layer, so as to reduce material damage, High current density, which is beneficial to the effect of grid heat dissipation
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[0033] The following describes the implementation of the present invention through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
[0034] A three-dimensional multi-groove gate enhancement type HEMT device, comprising a substrate 6, a heterojunction above the substrate 6, a gate 5, a source 3, and a drain 4. The heterojunction consists of a GaN layer 1 and a GaN layer 1. The upper XN2 layer is formed, the gate 5 is located above the heterojunction and forms Schottky contact with it, the source 3 is located on the surface of the XN layer 2 and forms an ohmic contact wit...
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